119 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V2546XS150BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	3.8 ns
71V6590380BGGI8	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	524288 words	COMMON	3.3		18	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel	3-STATE	512KX18	512K	3.135 V	-40 Cel		BOTTOM	R-PBGA-B119		3.465 V	1.2 mm	95.2 MHz	14 mm		9437184 bit	3.135 V	FLOW-THROUGH				YES	.06 Amp	22 mm	8 ns
IDT71V35761SA166BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.5 ns
71V2556XSA150BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM	X-PBGA-B119		3.465 V			14 mm		4718592 bit	3.135 V							22 mm	3.8 ns
IDT71V67603S166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
IDT71V3577S80BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8 ns
71V3556S133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.04 Amp	22 mm	4.2 ns
71V3556XSA166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3			166 MHz		Not Qualified	4718592 bit			e0	20	225		.045 Amp		3.5 ns
71V3559S75BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260		.04 Amp	22 mm	7.5 ns
71V3558XSA100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e1	30	260		.045 Amp		5 ns
71V3558S100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e1	30	260		.045 Amp		5 ns
IDT71V2556XS166BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	3.5 ns
71V65703S75BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	22 mm	7.5 ns
IDT71V67803S150BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.8 ns
K7P801811B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	524288 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE	e0				.07 Amp	22 mm	1.5 ns
KM736V789H-67	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.6 V		149 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE	e0				.03 Amp	22 mm	3.8 ns
K7N161845A-HI25	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY				1.27 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B119		2.625 V			14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE						22 mm	2.6 ns
K7A803600B-HC160	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.5 ns
KM718V947H-8	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION						22 mm	8.5 ns
KM736FV4002H-8	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3					Not Qualified	4718592 bit			e0				.1 Amp		7 ns
K7B323625M-HC65	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V		e0					22 mm	6.5 ns
K7P161866A-HC30	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.63 V	2.2 mm	300 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0				.128 Amp	20 mm	1.6 ns
KM736V947H-10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		83 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.03 Amp	22 mm	10 ns
K7M801825M-HC90T	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	9 ns
K7B803625A-HC85T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3			100 MHz		Not Qualified	9437184 bit			e0				.05 Amp		8.5 ns
K7P401866A-H27	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	2.35 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	ALSO REQUIRES 1.5V I/O SUPPLY	e0				.06 Amp	22 mm	1.9 ns
K7M161825M-HC90	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.03 Amp	22 mm	9 ns
K7P403622M-HC160	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		BOTTOM	R-PBGA-B119						Not Qualified	4718592 bit							.06 Amp		3 ns
KM718S8011H-4	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	524288 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.35 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.65 V			14 mm	Not Qualified	9437184 bit	2.35 V		e0				.06 Amp	22 mm	2 ns
K7P163666A-HC33	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.63 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0					20 mm	1.5 ns
K7A321800M-HC20	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		200 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	3.1 ns
K7A803600A-HC15	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	410 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		149 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE	e0				.05 Amp	22 mm	3.8 ns
K7P161812M-HC43	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.15 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.55 mm	232.55 MHz	14 mm	Not Qualified	18874368 bit	3.15 V		e0				.15 Amp	22 mm	4.3 ns
K7P403623B-HC700	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE	e0					22 mm	7 ns
K7B803625M-HC90T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM	R-PBGA-B119				100 MHz		Not Qualified	9437184 bit							.12 Amp		9 ns
K7M801825M-HC85	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	8.5 ns
KM736FS4011AH-33	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	650 mA	131072 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	2.35 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	POWER DOWN OPTION	e0				.06 Amp	22 mm	1.8 ns
K7P323674C-HC300	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	1048576 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	37748736 bit	2.37 V	PIPELINED ARCHITECTURE	e0				.07 Amp	22 mm	1.6 ns
K7P161866M-HC30	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		2.63 V	2.55 mm		14 mm	Not Qualified	18874368 bit	2.37 V		e0				.15 Amp	22 mm	1.6 ns
K7P321874C-HC250	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	1.8	1.8,2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		1.9 V	2.21 mm	250 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY	e0				.07 Amp	22 mm	2 ns
K7M803625M-HC10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	10 ns
KM736S849H-75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		2.625 V			14 mm	Not Qualified	9437184 bit	2.375 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION						22 mm	4.2 ns
KM718FV4002H-9	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3					Not Qualified	4718592 bit			e0				.1 Amp		8 ns
KM718S049G-75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.38 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3			133 MHz		Not Qualified	18874368 bit			e0				.03 Amp		4.2 ns
K7P803666M-HC20	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B119		2.65 V			14 mm	Not Qualified	9437184 bit	2.35 V	PIPELINED ARCHITECTURE						22 mm	2.5 ns
KM718V089H-54	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V		185 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	22 mm	3.3 ns
K7B163625A-HC75	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		512KX36	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm	7.5 ns
K7N801801M-HC15	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	3.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.