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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K7P321874C-HC250 |
| Description | LATE-WRITE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 119; Package Code: BGA; Package Shape: RECTANGULAR; Additional Features: PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY; |
| Datasheet | K7P321874C-HC250 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .07 Amp |
| Organization: | 2MX18 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 2.21 mm |
| Minimum Supply Voltage (Vsup): | 1.7 V |
| Sub-Category: | SRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 500 mA |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 119 |
| Maximum Clock Frequency (fCLK): | 250 MHz |
| No. of Words: | 2097152 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B119 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | BGA |
| Width: | 14 mm |
| Input/Output Type: | COMMON |
| Memory Density: | 37748736 bit |
| Minimum Standby Voltage: | 1.7 V |
| Memory IC Type: | LATE-WRITE SRAM |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 18 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA119,7X17,50 |
| Length: | 22 mm |
| Maximum Access Time: | 2 ns |
| No. of Words Code: | 2M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY |
| Parallel or Serial: | PARALLEL |
| Terminal Pitch: | 1.27 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 1.9 V |
| Power Supplies (V): | 1.8,2.5 |
