176 SRAM 13

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MCM69D536TQ5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		1179648 bit	3.135 V				24 mm	5 ns
MCM63D736TQ133	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	4 ns
MCM63D736TQ83	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	6 ns
MCM63D736ATQ83	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	6 ns
MCM69D536TQ8R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	66 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.1 Amp	24 mm	8 ns
MCM63D736TQ100	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	5 ns
MCM63V736TQ5	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.14 V		QUAD	2	S-PQFP-G176					Not Qualified	4718592 bit				.1 Amp		5 ns
MCM69D536TQ6R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	83 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.1 Amp	24 mm	6 ns
MCM69D536TQ8	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K		Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		24 mm	8 ns
MCM69D536TQ6	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	83 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.1 Amp	24 mm	6 ns
MCM69D536TQ5R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	100 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.1 Amp	24 mm	5 ns
MCM63D736ATQ100	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	5 ns
MCM63D736ATQ133	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K			QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V				24 mm	4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.