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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M621256-12PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	SEPARATE	5	5	1	IN-LINE, SHRINK PITCH	DIP24,.3	SRAMs	1.778 mm	70 Cel	3-STATE	256KX1	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.01 Amp	22.86 mm	12 ns
IMS1629S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T24		5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00007 Amp	30.48 mm	15 ns
IMS1605E-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0		.002 Amp		25 ns
IMS1601LE-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.00007 Amp	15.418 mm	45 ns
IMS1800E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.01 Amp	15.418 mm	25 ns
MK41S80X12	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.25 V	3.556 mm	7.62 mm	Not Qualified	16384 bit	4.75 V	TOTEM-POLE MATCH OUTPUT; FLASH CLEAR	e0	YES	.12 Amp	15.418 mm	12 ns
IMS1820S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T24		5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V			NO		30.48 mm	45 ns
IMS1800P-45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T24					Not Qualified	262144 bit			e0		.01 Amp		45 ns
IMS1624E-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.014 Amp	15.418 mm	35 ns
5962-8685913LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel		DUAL		R-XDIP-T24		5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V					30.48 mm	55 ns
MK44S80N-17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL	1	R-PDIP-T24		5.5 V			Not Qualified	65536 bit	4.5 V			YES			17 ns
M624017-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0		.01 Amp		20 ns
MK44S80N-20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL	1	R-PDIP-T24		5.5 V			Not Qualified	65536 bit	4.5 V			YES			20 ns
M48Z02-120PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0		.003 Amp		120 ns
M48Z02-150PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		150 ns
M48Z12-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	200 ns
M48Z12-70PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	70 ns
M48Z12-70PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		70 ns
M48Z12-200PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		200 ns
M48Z12-120PC6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0		.003 Amp		120 ns
M48Z02-70PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	70 ns
M48Z12-120PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0		.003 Amp		120 ns
M48Z12-200PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		200 ns
M48Z02-200PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		200 ns
M48Z02-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		70 ns
M48Z02-150PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	150 ns
M48Z02-200PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	200 ns
M48Z12-150PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		150 ns
M48Z12-150PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		150 ns
M48Z02-120PC6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0		.003 Amp		120 ns
M48Z12-150PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	150 ns
M48Z12-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3		.003 Amp		70 ns
M48Z12-200PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3	YES	.003 Amp	34.545 mm	200 ns
FMX1108-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24					Not Qualified	2048 bit					.00004 Amp		100 ns
FM1408-80PSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24					Not Qualified	16384 bit					.0001 Amp		80 ns
FMX1208-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24					Not Qualified	4096 bit					.00004 Amp		100 ns
FMX1208-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24					Not Qualified	4096 bit					.00004 Amp		100 ns
FM1108-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24					Not Qualified	2048 bit					.00004 Amp		100 ns
FMX1008-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-XDIP-T24					Not Qualified	1024 bit					.00004 Amp		200 ns
FMX1008-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	128 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDSO-G24					Not Qualified	1024 bit					.00004 Amp		200 ns
FMX1108-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24					Not Qualified	2048 bit					.00004 Amp		100 ns
FM1408-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G24					Not Qualified	16384 bit					.00004 Amp		100 ns
FM1208-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24					Not Qualified	4096 bit					.00004 Amp		200 ns
FMX1008-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDIP-T24					Not Qualified	1024 bit					.00004 Amp		150 ns
FM1308-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	1024 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDSO-G24					Not Qualified	8192 bit					.00004 Amp		100 ns
FM1308-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-XDIP-T24					Not Qualified	8192 bit					.00004 Amp		200 ns
FM1008-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-XDIP-T24					Not Qualified	1024 bit					.00004 Amp		200 ns
FMX1308-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDIP-T24					Not Qualified	8192 bit					.00004 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.