24 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
FM1008-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	128 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDSO-G24						Not Qualified	1024 bit							.00004 Amp		200 ns
S70KS1281DPBHI023	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	72 mA	16777216 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		16MX8	16M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	1.95 V	1 mm	166 MHz	6 mm		134217728 bit	1.7 V						.0004 Amp	8 mm
S80KS5122GABHI020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHM020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHM023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHV023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHV020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHA020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHB020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHB023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHA023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHI023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
CY14V101QS-BK108XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1		260			8 mm
CY7C197BN-15VC	Infineon Technologies	STANDARD SRAM		24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	SEPARATE	5		1	SMALL OUTLINE	SOJ24,.34		1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.55 mm		7.505 mm		262144 bit	4.5 V					NO	.01 Amp	15.365 mm	15 ns
DS1609-50+	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	MATTE TIN	DUAL	2, (MUXED)	R-PDIP-T24	1					Not Qualified	2048 bit			e3	30	260		.0003 Amp		50 ns
DS2016-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		3		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24	1	3.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e0					31.75 mm	250 ns
DS1609S-50+	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	MATTE TIN	DUAL	2, (MUXED)	R-PDSO-G24	1					Not Qualified	2048 bit			e3	30	260		.0003 Amp		50 ns
DS2016-100+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e3	30	260		.000001 Amp	31.75 mm	100 ns
DS1381	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V	10.29 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.007 Amp	33.72 mm	100 ns
DS1609SN-50	Maxim Integrated	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm		7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	15.4 mm	50 ns
DS2016R-100	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V	2.67 mm		7.5 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e0				.000001 Amp	17.9 mm	100 ns
DS1609S	Maxim Integrated	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	2.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	2, (MUXED)	R-PDSO-G24						Not Qualified	2048 bit			e0				.0003 Amp		50 ns
DS1609S-50	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2, (MUXED)	R-PDSO-G24						Not Qualified	2048 bit			e0				.0003 Amp		50 ns
DS1380	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			25 mA	2048 words				8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0				.007 Amp		100 ns
DS2016	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	2.7 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0				.000001 Amp	31.75 mm	100 ns
DS2016-100	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T24	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e0				.000001 Amp	31.75 mm	100 ns
DS1380SN	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2048 words		5		8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V	2.65 mm		7.5 mm	Not Qualified	16384 bit	4.5 V		e0					15.4 mm
DS1609-50	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2, (MUXED)	R-PDIP-T24						Not Qualified	2048 bit			e0				.0003 Amp		50 ns
DS2016R-100+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G24	1	5.5 V	2.67 mm		7.5 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e3	30	260		.000001 Amp	17.9 mm	100 ns
DS2016S-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE				85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V				Not Qualified	16384 bit	2.7 V	CAN ALSO BE OPERATED WITH 5V SUPPLY	e0	20	240				150 ns
DS1380S	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			25 mA	2048 words				8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16384 bit			e0				.007 Amp		100 ns
DS2016R-150+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G24	1	3.5 V	2.65 mm		7.5 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e3					15.4 mm	250 ns
DS2016R-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	3.5 V	2.65 mm		7.5 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e0					15.4 mm	250 ns
DS1609-35	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	31.75 mm	35 ns
DS2016S	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V	3.05 mm		8.565 mm	Not Qualified	16384 bit	2.7 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0				.000001 Amp	15.6 mm	100 ns
DS2016-150+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		3		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24		3.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e3					31.75 mm	250 ns
DS1220AD-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.005 Amp	33.785 mm	100 ns
DS1220AD-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	9.398 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0				.005 Amp	33.782 mm	120 ns
DS1220AB-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.25 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e0				.005 Amp	33.785 mm	120 ns
DS1220AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.25 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e0				.005 Amp	33.785 mm	100 ns
DS1220Y-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		150 ns
DS1220AB-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.25 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e0				.005 Amp	33.785 mm	150 ns
DS1220Y-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEARS MINIMUM DATA RETENTION	e0				.004 Amp		150 ns
DS1220AD-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.005 Amp	33.785 mm	150 ns
DS1220Y-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3				.004 Amp		150 ns
DS1220AB-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.25 V	10.54 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e0				.005 Amp	33.785 mm	200 ns
DS1220AB-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.25 V	9.398 mm		15.24 mm	Not Qualified	16384 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0				.005 Amp	33.782 mm	120 ns
DS1220AB-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24		5.25 V				Not Qualified	16384 bit	4.75 V		e0				.005 Amp		200 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.