24 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TMM2018AD-35	Toshiba	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit		e0						35 ns
TC55B464J-15	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.7 mm	7.7 mm	Not Qualified	262144 bit	4.5 V	e0			NO		15.88 mm	15 ns
TC5517CFL-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16384 bit		e0				.000001 Amp		150 ns
TC55464AP-25	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDIP-T24		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.8 mm	25 ns
TC55464AJ-15	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J24		5.5 V	3.7 mm	7.7 mm	Not Qualified	262144 bit	4.5 V	e0					15.88 mm	15 ns
TC5517CPL-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit		e0				.000001 Amp		150 ns
HM6789HAJP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						15.63 mm	15 ns
6116LA25PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						25 ns
HM6116AP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.7 mm	15.24 mm	Not Qualified	16384 bit	4.5 V						31.6 mm	150 ns
6116LA25TPG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel		DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V					.00002 Amp		25 ns
HM6707P-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.88 mm	25 ns
HM6116AP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.7 mm	15.24 mm	Not Qualified	16384 bit	4.5 V						31.6 mm	200 ns
HM3-6516B-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	34 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel		DUAL		R-PDIP-T24						16384 bit						.000025 Amp		120 ns
HM3-6516-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	23 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel		DUAL		R-PDIP-T24					Not Qualified	16384 bit						.00025 Amp		200 ns
71501S45SO	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	SYNCHRONOUS	125 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24	1				Not Qualified	65536 bit		e0	30	225		.125 Amp		45 ns
6116LA20PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						19 ns
UPB100474AD-6	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO				-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	4096 bit		e0						6 ns
6116SA20TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						19 ns
UPB10474D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T24					Not Qualified	4096 bit		e0						15 ns
HM6116-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit		e0				.002 Amp		150 ns
HM6707P-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.88 mm	20 ns
HM6707JP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						15.63 mm	20 ns
8403613JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V	e0		240	YES	.01 Amp	32.004 mm	70 ns
HM6708AJP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						15.63 mm	20 ns
HM6708SHJP-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						15.63 mm	10 ns
8403616LA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Qualified	16384 bit	4.5 V	e0		240	YES	.0002 Amp	32.004 mm	90 ns
6116SA45PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						45 ns
HM6789HP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						29.88 mm	15 ns
8403608LX	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	16384 bit	4.5 V	e0	NOT APPLICABLE	NOT APPLICABLE			32.004 mm	45 ns
HM6116P-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V				16384 bit	4.5 V							120 ns
101474S7D	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO				-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	70 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	TIN LEAD	DUAL		R-XDIP-T24					Not Qualified	4096 bit		e0						7 ns
HM6708P-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.88 mm	20 ns
HM6707AP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.88 mm	20 ns
HM6708P-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V						29.88 mm	25 ns
8403611JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V	e0		240	YES	.02 Amp	32.004 mm	55 ns
UPD100500D-20	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO				-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	SEPARATE		-4.5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	256KX1	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	262144 bit		e0						20 ns
UPB100422B-10	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	256 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-CQFP-F24					Not Qualified	1024 bit		e0						10 ns
6116LA35TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						35 ns
6116SA35PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						35 ns
HM6116LP-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V				16384 bit	4.5 V							120 ns
71501S35SO	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	SYNCHRONOUS	125 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24	1				Not Qualified	65536 bit		e0	30	225		.125 Amp		35 ns
UPB10474D-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T24					Not Qualified	4096 bit		e0						10 ns
HM6787HAJP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						15.63 mm	15 ns
6116SA20PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						19 ns
6116LA70TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V	e0						70 ns
UPB10474AD-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO				-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	70 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	4096 bit		e0						7 ns
6116LA25TPGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel		DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V					.00002 Amp		25 ns
5962-01-227-2123	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel		DUAL		R-PDIP-T24					Not Qualified	16384 bit						.002 Amp		120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.