24 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

MCM6810P

Motorola

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

128 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128X8

128

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T24

5.25 V

5.08 mm

15.24 mm

Not Qualified

1024 bit

4.75 V

e0

NO

31.75 mm

450 ns

MT5C2561-20

Micron Technology

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

262144 words

SEPARATE

5

5

1

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256KX1

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

262144 bit

e0

.005 Amp

20 ns

NMC2116N20L

National Semiconductor

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

16384 bit

e0

200 ns

TC5517APL-2

Toshiba

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

16384 bit

e0

.000001 Amp

200 ns

M38510/29104BJX

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

125 Cel

2KX8

2K

-55 Cel

DUAL

R-XDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

90 ns

TMS4008NL0

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

1KX8

1K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

8192 bit

450 ns

TMS6789-15DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

15 ns

5962-8874001LA

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

125 Cel

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

e0

35 ns

TMS4016-25NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

TMS100500JD

Texas Instruments

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

CERAMIC

NO

ECL100K

-4.5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

SEPARATE

-4.5

1

IN-LINE

DIP24,.4

SRAMs

2.54 mm

85 Cel

OPEN-EMITTER

256KX1

256K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

262144 bit

10 ns

SMJ64C256-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

35 ns

TMS6708-25DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

25 ns

TMS6708-20DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

20 ns

TMS2150-3JD

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

8

IN-LINE

70 Cel

TOTEM POLE

512X8

512

0 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

4096 bit

4.5 V

NO

35 ns

TMS6789-30DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

30 ns

SM64C256-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

35 ns

SN54AS870JT

Texas Instruments

MULTI-PORT SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

DIP24,.3

Other Memory ICs

2.54 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

2

R-CDIP-T24

5.5 V

Not Qualified

64 bit

4.5 V

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

NOT SPECIFIED

NOT SPECIFIED

NO

20 ns

TMS6787-20DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX1

64K

4.5 V

0 Cel

DUAL

R-PDSO-J24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

20 ns

5962-8874002LX

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

25 ns

TMS6716N

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

25 ns

SM61CD256-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

SEPARATE

5

5

1

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

256KX1

256K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

45 ns

8403614LX

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

.02 Amp

31.877 mm

35 ns

TMS4016-20NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

SMJ68CE16-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

35 ns

TMS6789-20N

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

20 ns

TMS2150-4JD

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

8

IN-LINE

70 Cel

TOTEM POLE

512X8

512

0 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

4096 bit

4.5 V

NO

45 ns

8403611LX

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.2 V

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

.02 Amp

31.877 mm

55 ns

5962-01-231-8330

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

200 ns

8403611LA

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

31.877 mm

55 ns

TMS6789-25DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

25 ns

8403614LA

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

31.877 mm

35 ns

TMS2150ANT

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

8

IN-LINE

2.54 mm

70 Cel

512X8

512

0 Cel

DUAL

R-PDIP-T24

5.08 mm

7.62 mm

Not Qualified

4096 bit

31.64 mm

35 ns

SM68CE16-25JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

25 ns

TMS6789-20DJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

20 ns

TMS2150ADW

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

NMOS

GULL WING

PARALLEL

ASYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512X8

512

0 Cel

DUAL

R-PDSO-G24

2.65 mm

7.5 mm

Not Qualified

4096 bit

15.4 mm

35 ns

SMJ5517-15JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

150 ns

5962-8969001LX

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

DUAL

R-XDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

.02 Amp

31.877 mm

25 ns

SMJ64C256-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

45 ns

5962-8988901KA

Texas Instruments

STANDARD SRAM

MILITARY

24

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

TTL

MIL-STD-883

FLAT

PARALLEL

ASYNCHRONOUS

16 words

5

4

FLATPACK

125 Cel

16X4

16

-55 Cel

DUAL

R-GDFP-F24

5.5 V

Not Qualified

64 bit

4.5 V

24 ns

TMS2150-5DWR

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

NMOS

GULL WING

PARALLEL

ASYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

TOTEM POLE

512X8

512

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

2.65 mm

7.5 mm

Not Qualified

4096 bit

4.5 V

NO

15.4 mm

55 ns

TMS2150AJD

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

8

IN-LINE

70 Cel

512X8

512

0 Cel

DUAL

R-CDIP-T24

Not Qualified

4096 bit

35 ns

5962-01-152-7032

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

SMJ61CD256-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

SEPARATE

5

5

1

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

256KX1

256K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

35 ns

TMS2150-3DWR

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

NMOS

GULL WING

PARALLEL

ASYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

TOTEM POLE

512X8

512

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

2.65 mm

7.5 mm

Not Qualified

4096 bit

4.5 V

NO

15.4 mm

35 ns

SNJ54AS870JT

Texas Instruments

MULTI-PORT SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

DIP24,.3

Other Memory ICs

2.54 mm

125 Cel

16X4

16

-55 Cel

DUAL

R-CDIP-T24

5.5 V

Not Qualified

64 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

20 ns

TMS4016-15NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

SNJ54ALS870JT

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

DIP24,.3

Other Memory ICs

2.54 mm

125 Cel

16X4

16

-55 Cel

DUAL

R-GDIP-T24

5.5 V

Not Qualified

64 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

24 ns

SM68CE16-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.