24 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SN74AS870DWR	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	2	R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE				NO		15.4 mm	15 ns
SN74172NP3	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8 words				2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL		R-PDIP-T24
SN74ACT2150A-30DW	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	512 words		5	5	8	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	4096 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO	.095 Amp	15.4 mm	30 ns
SN74172N	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL	3	R-PDIP-T24		5.25 V	5.08 mm	15.24 mm	Not Qualified	16 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO		31.75 mm	50 ns
SN74ACT2150A-30DWR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	4096 bit	4.5 V					NO		15.4 mm	30 ns
SN74172N3	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8 words				2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL		R-PDIP-T24
SN74ACT2150A-20NT	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	4096 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO	.095 Amp	31.64 mm	20 ns
SN74ALS870DWG4	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15.4 mm	17 ns
SN74ALS870NT	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel		16X4	16		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE	e4					31.64 mm	19 ns
SN74172J-00	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE				70 Cel	3-STATE	8X2	8		0 Cel		DUAL	2	R-GDIP-T24		5.25 V			Not Qualified	16 bit	4.75 V					NO
SN74ACT2150A-20JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-CDIP-T24		5.5 V			Not Qualified	4096 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO	.095 Amp		20 ns
SN74172N-00	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE			2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL	2	R-PDIP-T24		5.25 V	5.08 mm	15.24 mm	Not Qualified	16 bit	4.75 V					NO		31.75 mm
SN74ACT2150A-30JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-CDIP-T24		5.5 V			Not Qualified	4096 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO	.095 Amp		30 ns
SN74ACT2150A-20DW	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	512 words		5	5	8	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	4096 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO	.095 Amp	15.4 mm	20 ns
SN74ACT2150A-20DWR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	TOTEM POLE	512X8	512		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	4096 bit	4.5 V					NO		15.4 mm	20 ns
SN74ALS870DWR	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15.4 mm	17 ns
SN74172N1	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8 words				2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL		R-PDIP-T24					Not Qualified
SN74172NP1	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8 words				2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL		R-PDIP-T24					Not Qualified
SN74ALS870NSR	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.3	Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2 mm	5.3 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15 mm	17 ns
SN74ALS870NSRE4	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.3	Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2 mm	5.3 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15 mm	17 ns
SN74ALS870DWE4	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2.65 mm	7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15.4 mm	17 ns
SN74ALS870NTE4	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel		16X4	16		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE	e4					31.64 mm	19 ns
SN74172J	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL	3	R-GDIP-T24		5.25 V			Not Qualified	16 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO
DS1609S-35	Analog Devices	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	15.4 mm	35 ns
DS1609N-50	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24		5.5 V	5.08 mm	15.24 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	31.75 mm	50 ns
DS1609	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	2.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24					Not Qualified	2048 bit			e0				.0003 Amp		50 ns
DS1380N	Analog Devices	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0					31.75 mm
DS1609N-35	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24		5.5 V	5.08 mm	15.24 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	31.75 mm	35 ns
DS1609SN-35	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	15.4 mm	35 ns
DS1220AD-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.5 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.01 Amp	33.02 mm	100 ns
DS1220AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP	e0					33.782 mm	200 ns
DS1220AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP	e0					33.782 mm	200 ns
DS1220AB-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.25 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3				.01 Amp	33.02 mm	100 ns
DS1220AB-150IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e3					33.782 mm	150 ns
DS1220AD-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.5 V			Not Qualified	16384 bit	4.5 V		e3				.01 Amp		120 ns
DS1220AD-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.5 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e3				.01 Amp	33.02 mm	100 ns
DS1220AD	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP	e0					33.782 mm	200 ns
DS1220AB-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.25 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3				.01 Amp	33.02 mm	100 ns
DS1220AB-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.25 V			Not Qualified	16384 bit	4.75 V		e3				.01 Amp		150 ns
DS1220AD-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.5 V			Not Qualified	16384 bit	4.5 V		e3				.01 Amp		150 ns
DS1220AD-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP	e0				.005 Amp	33.782 mm	200 ns
DS1220AD-120-IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-XDIP-T24		5.5 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			33.785 mm	120 ns
DS1220AB-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.25 V			Not Qualified	16384 bit	4.75 V		e3				.01 Amp		200 ns
DS1220AB-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.25 V			Not Qualified	16384 bit	4.75 V		e3				.01 Amp		200 ns
DS1220AD-150-IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-XDIP-T24		5.5 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			33.785 mm	150 ns
LC3517B-10	Onsemi	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel		DUAL		R-PDIP-T24					Not Qualified	16384 bit							.00002 Amp		100 ns
LC3517BL-10	Onsemi	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel		DUAL		R-PDIP-T24					Not Qualified	16384 bit							.000001 Amp		100 ns
IMS1600E-55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0				.014 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.