256 SRAM 1,098

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS3050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS2065W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS2030Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e0				27 mm	100 ns
DS2045Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	100 ns
DS2045W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS2030W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS2045AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e0				27 mm	100 ns
DS3045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0	NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS3030W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V		e0				27 mm	100 ns
DS2045L-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e1			.001 Amp	27 mm	100 ns
DS2030AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	100 ns
DS2045AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e1			.005 Amp	27 mm	70 ns
DS2045Y-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e1			.005 Amp	27 mm	70 ns
DS2030Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e0				27 mm	70 ns
DS2030L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V		e0				27 mm	100 ns
DS3070W-100#	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	16777216 bit	3 V		e1				27 mm	100 ns
DS2030Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e1			.005 Amp	27 mm	100 ns
DS2045Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	27 mm	100 ns
DS2030Y-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e1			.005 Amp	27 mm	70 ns
DS2030AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	70 ns
DS2070W-100#	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words		3.3	3.3	8	GRID ARRAY	BGA256,26X26,50	SRAMs	1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V			27 mm	Not Qualified	16777216 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS3050W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e1				27 mm	100 ns
DS2045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS2045L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0				27 mm	100 ns
DS2030AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS2045W-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	70 ns
DS2030AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	70 ns
DS2050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS2065W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V		e0				27 mm	100 ns
70V7519S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						4.2 ns
70T3399S200BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B256	3	2.6 V	1.7 mm	200 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.015 Amp	17 mm	3.4 ns
70T659S12BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225	.01 Amp	17 mm	12 ns
70V3379S5BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V		e0	20	225	.03 Amp	17 mm	5 ns
70V3569S6BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260	.015 Amp	17 mm	6 ns
70T631S15BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225	.01 Amp	17 mm	15 ns
70V7519S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						3.6 ns
70T3539MS133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	740 mA	524288 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	18874368 bit			e1	30	260	.02 Amp		15 ns
70T3539MS133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	18874368 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.025 Amp		15 ns
70V3389S4BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V		e0	20	225	.015 Amp	17 mm	4.2 ns
70V3379S6BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260	.015 Amp	17 mm	6 ns
70V3389S6BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	83 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260	.03 Amp	17 mm	6 ns
70V7599S200BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	200 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225	.03 Amp	17 mm	10 ns
70T659S12BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225	.02 Amp	17 mm	12 ns
70V7319S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE						4.2 ns
70V7319S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE						4.2 ns
70V3579S5BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260			5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.