48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS61WV102416BLL-10MLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		1MX16	1M	2.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	9 mm		16777216 bit	2.4 V		e1	10	260	YES	.025 Amp	11 mm	10 ns
CY62167G30-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8		.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V		e1	30	260	YES	.000016 Amp	8 mm	45 ns
R1LV1616HSA-4SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.7 V						.000008 Amp	18.4 mm	45 ns
IS62WV10248BLL-55BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX8	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	7.2 mm	Not Qualified	8388608 bit	2.5 V		e1	10	260		.00002 Amp	8.7 mm	55 ns
CY7C1071DV33-12BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	2097152 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY14B256LA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	30	260		.005 Amp	15.875 mm	45 ns
RMLV1616AGSA-5S2#KA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			.5 mm	85 Cel		1MX16	1M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.7 V	CAN ALSO BE ORGANISED AS 2M X 8				YES	.0003 Amp	18.4 mm	55 ns
CY14V101NA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	65536 words		3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
IDT7142LA55P	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.0015 Amp	61.849 mm	55 ns
RMLV0816BGBG-4S2#KC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	7.5 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS	e1			YES	.00001 Amp	8.5 mm	45 ns
7130LA55PDGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	2	R-PDIP-T48	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3	NOT SPECIFIED	260		.004 Amp	61.849 mm	55 ns
CY62147EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e1	20	260		.000007 Amp	8 mm	45 ns
IS62WV102416DBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
CY62147EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e1	20	260		.000007 Amp	8 mm	45 ns
CY62168DV30LL-55BVI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	8 mm	Not Qualified	16777216 bit	2.2 V		e0		220		.00001 Amp	9.5 mm	55 ns
CY62157EV30LL-45BVXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260	YES	.000008 Amp	8 mm	45 ns
IS61WV102416DBLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		16777216 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS66WVE4M16EALL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
CY7C1011DV33-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	3 V		e1	20	260		.01 Amp	8 mm	10 ns
CY62126EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	1048576 bit	2.2 V		e1	20	260		.000003 Amp	8 mm	45 ns
CY62157EV30LL-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260	YES	.000008 Amp	8 mm	45 ns
CY62168EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260	YES	.00001 Amp	8 mm	45 ns
CY7S1061GE30-10BVM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		1048576 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel		1MX16	1M	2.2 V	-55 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V		e0		220			8 mm	10 ns
RMLV0816BGSA-4S2#KA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.4 mm	45 ns
RMWV6416AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM		48		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	38 mA	4194304 words	COMMON	3		16						85 Cel		4MX16	4M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V				67108864 bit	2.7 V					YES	.003 Amp		55 ns
CY62167EV18LL-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY62167EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY62168EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260		.00001 Amp	8 mm	45 ns
IS62WV102416EBLL-45BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V		e1	30	260		.000065 Amp	8 mm	45 ns
RMWV3216AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	7.5 mm		33554432 bit	2.7 V		e1			YES	.000032 Amp	8.5 mm	55 ns
7130LA100CB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	60.96 mm	100 ns
IS62WV102416DBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.2 V						.000025 Amp	18.4 mm	45 ns
RMLV1616AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		16	GRID ARRAY	BGA48,6X8,30	8		.75 mm	85 Cel		1MX16	1M	2.7 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	7.5 mm		16777216 bit	2.7 V	CAN ALSO BE ORGANISED AS 2M X 8				YES	.0003 Amp	8.5 mm	55 ns
IDT7130LA100CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	20	240		.004 Amp	60.96 mm	100 ns
R1WV6416RBG-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	8.5 mm	Not Qualified	67108864 bit	2.7 V				260		.000024 Amp	11 mm	55 ns
RMLV0816BGSA-4S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.4 mm	45 ns
7132LA55PDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE					85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T48	1	5.5 V				16384 bit	4.5 V		e3	NOT SPECIFIED	260				55 ns
IS61WV51216EDBLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	8388608 bit	2.4 V						.015 Amp	8 mm	10 ns
CY62147EV30LL-45B2XA	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e1				.000007 Amp	8 mm	45 ns
CY62157EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	8388608 bit	1.65 V		e1	20	260		.000003 Amp	8 mm	55 ns
CY62167EV30LL-45BVI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	16777216 bit	2.2 V	IT ALSO OPERATES AT 2.2V TO 3.6V	e0	20	260			8 mm	45 ns
CY62167G30-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8		.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V		e1		260	YES	.000016 Amp	8 mm	45 ns
CY62167G30-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,47,20	8		.5 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V				260	YES	.000016 Amp	18.4 mm	45 ns
CY62167GE30-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V		e3					18.4 mm	45 ns
CY62168DV30LL-55BVIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON		2.5/3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48					Not Qualified	16777216 bit							.00001 Amp		55 ns
CY7C1041GN30-10BVJXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		3.6 V	1 mm	6 mm		4194304 bit	2.2 V					YES	.008 Amp	8 mm	10 ns
R1LV1616HSA-4SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.7 V	ALSO ORGANISED AS 2MX8		20	260	YES	.000008 Amp	18.4 mm	45 ns
R1LV1616HSA-4SI#S1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.7 V	ALSO ORGANISED AS 2MX8				YES	.000008 Amp	18.4 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.