48 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

IS62WV51216GBLL-45TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

8388608 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

12 ns

R1LV1616HBG-4SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

3

3.6 V

Not Qualified

16777216 bit

2.7 V

45 ns

RMWV6416AGBG-5S2

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

3

16

GRID ARRAY

8

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

67108864 bit

2.7 V

55 ns

RMWV6416AGBG-5S2#KC0

Renesas Electronics

STANDARD SRAM

48

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

38 mA

4194304 words

COMMON

3

16

85 Cel

4MX16

4M

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3

3.6 V

67108864 bit

2.7 V

YES

.003 Amp

55 ns

71V416L12BE8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

4

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e0

30

225

.01 Amp

9 mm

12 ns

AS7C31026C-12BIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

BOTTOM

R-PBGA-B48

3

3.6 V

1.34 mm

6 mm

Not Qualified

1048576 bit

3 V

e3/e6

40

260

8 mm

12 ns

AS7C316098A-10BINTR

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

3

3.6 V

1.4 mm

6 mm

16777216 bit

2.7 V

8 mm

10 ns

IS61WV102416BLL-10MI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

95 mA

1048576 words

COMMON

3.3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1.2 V

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

16777216 bit

2.4 V

e0

30

235

.02 Amp

11 mm

10 ns

IS61WV204816BLL-10TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS61WV25616BLL-10BLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

3.3

2.5/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.009 Amp

10 ns

IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

45 ns

IS62WV102416GBLL-45TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS66WVE4M16EBLL-70BLI-TR

Integrated Silicon Solution

PSEUDO STATIC RAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

70 ns

R1LV0816ASA-5SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3

2.7 V

1.2 mm

12 mm

8388608 bit

2.4 V

ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE

18.4 mm

70 ns

R1LV1616RSA-7SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

COMMON

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

DUAL

R-PDSO-G48

2

Not Qualified

16777216 bit

260

70 ns

RMLV1616AGBG-4U2#AC0

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

45 ns

71V016SA10BFG8

Renesas Electronics

STANDARD SRAM

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

70 Cel

3-STATE

64KX16

64K

3.15 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

S-PBGA-B48

3

3.6 V

1.4 mm

7 mm

1048576 bit

3.15 V

e1

40

260

YES

.01 Amp

7 mm

10 ns

71V016SA15BFGI8

Renesas Electronics

STANDARD SRAM

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

64KX16

64K

3.15 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

S-PBGA-B48

3

3.6 V

1.4 mm

7 mm

1048576 bit

3.15 V

e1

40

260

YES

.01 Amp

7 mm

15 ns

71V016SA20BFGI

Renesas Electronics

STANDARD SRAM

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

64KX16

64K

3.15 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

S-PBGA-B48

3

3.6 V

1.4 mm

7 mm

1048576 bit

3.15 V

e1

40

260

YES

.01 Amp

7 mm

20 ns

71V416L12BEGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e1

40

260

.01 Amp

9 mm

12 ns

71V416L12BEI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

4

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e0

30

225

.01 Amp

9 mm

12 ns

71V416L15BEG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

Not Qualified

4194304 bit

3 V

e1

260

.01 Amp

15 ns

71V416L15BEGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

Not Qualified

4194304 bit

3 V

e1

260

.01 Amp

15 ns

71V416L15BEI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

4

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e0

30

225

.01 Amp

9 mm

15 ns

71V416S15BEI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

4

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e0

30

225

.02 Amp

9 mm

15 ns

CS26LV64173HCP70

Chiplus Semiconductor

PSEUDO STATIC RAM

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

70 Cel

4MX16

4M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

67108864 bit

2.7 V

8 mm

70 ns

CY14B256LA-SP45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

3

3/3.3

8

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

SRAMs

.635 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G48

3

3.6 V

2.794 mm

7.5057 mm

Not Qualified

262144 bit

2.7 V

e4

30

260

.005 Amp

15.875 mm

45 ns

CY62167EV30LL-45BVXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

8

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

16777216 bit

2.2 V

e1

20

260

8 mm

45 ns

CY7C1041DV33-10BVI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

8 mm

10 ns

CY7C1041DV33-10BVIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

8 mm

10 ns

CY7C1071DV33-12BAXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

250 mA

2097152 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

2MX16

2M

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

Not Qualified

33554432 bit

3 V

e1

260

.05 Amp

9.5 mm

12 ns

IDT71V016SA10BFG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

3-STATE

64KX16

64K

3.15 V

0 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.34 mm

7 mm

Not Qualified

1048576 bit

3.15 V

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

e1

40

260

.01 Amp

7 mm

10 ns

IDT71V016SA12BFGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.34 mm

7 mm

Not Qualified

1048576 bit

3.15 V

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

e1

40

260

.01 Amp

7 mm

12 ns

IDT71V016SA15BFGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.34 mm

7 mm

Not Qualified

1048576 bit

3.15 V

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

e1

40

260

.01 Amp

7 mm

15 ns

IDT71V016SA20BFG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.34 mm

7 mm

Not Qualified

1048576 bit

3.15 V

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

e1

40

260

.01 Amp

7 mm

20 ns

IDT71V416L12BEGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e1

40

260

.01 Amp

9 mm

12 ns

IDT71V416L12BEGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

4

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e1

9 mm

12 ns

IS64WV102416BLL-10MA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

140 mA

1048576 words

COMMON

3.3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

125 Cel

3-STATE

1MX16

1M

1.2 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

16777216 bit

2.4 V

e0

.05 Amp

11 mm

10 ns

IS64WV204816BLL-12BLA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

2MX16

2M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

12 ns

R1LV1616RSA-7SI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

COMMON

3

3/3.3

16

SMALL OUTLINE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

2.7 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

Not Qualified

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

.000006 Amp

70 ns

R1LV3216RSA-5SI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

2097152 words

COMMON

3

3/3.3

16

SMALL OUTLINE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

2MX16

2M

2.7 V

-40 Cel

DUAL

R-PDSO-G48

1

3.6 V

Not Qualified

33554432 bit

2.7 V

.000012 Amp

70 ns

R1LV3216RSA-5SI#B1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

33554432 bit

2.7 V

55 ns

R1LV3216RSA-5SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

2097152 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

2MX16

2M

2 V

-40 Cel

DUAL

R-PDSO-G48

2

3.6 V

Not Qualified

33554432 bit

2.7 V

260

.000012 Amp

55 ns

R1LV3216RSA-5SI#S1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

33554432 bit

2.7 V

55 ns

AS7C316096A-10TINTR

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

160 mA

2097152 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

2MX8

2M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

e3/e6

.04 Amp

18.4 mm

10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.