52 SRAM 1,359

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
R1WV3216RSD-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16		SRAMs	.4 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel	Tin/Copper (Sn/Cu)	DUAL		R-PDSO-G52	2	3.6 V	1.2 mm	8.89 mm	Not Qualified	33554432 bit	2.7 V		e2	20	260		10.79 mm	70 ns
5962-8700201UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				14.3002 mm	45 ns
70125S35JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V		e0	20	225	.005 Amp	19.1262 mm	35 ns
70121L35JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.005 Amp		35 ns
70125S25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		25 ns
7014S12JG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX9	4K		0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3	30	260		19.1262 mm	12 ns
7014S25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER				1.27 mm	85 Cel		4KX9	4K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3				19.1262 mm	25 ns
HM67M1864CP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF-TIMED WRITE CYCLE; BYTE WRITE CONTROL					19.1262 mm	12 ns
70125L35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		35 ns
7014S12JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		4KX9	4K		0 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm		36864 bit	4.5 V		e3	NOT SPECIFIED	260		19.1262 mm	12 ns
R1WV6416RSD-7SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2				Not Qualified	67108864 bit					260	.000024 Amp		70 ns
70125L25JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260	.015 Amp	19.1262 mm	25 ns
R1WV3216RSD-8SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16		SRAMs	.4 mm	70 Cel	3-STATE	2MX16	2M	2 V	0 Cel		DUAL		R-PDSO-G52		3.6 V	1.2 mm	8.89 mm	Not Qualified	33554432 bit	2.7 V						10.79 mm	85 ns
R1WV6416RSD-7SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2				Not Qualified	67108864 bit					260	.000024 Amp		70 ns
5962-8700222UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	35 ns
70125S35JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.005 Amp		35 ns
5962-8700213UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	45 ns
70121S25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		25 ns
5962-8700208UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	55 ns
70125L35JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.005 Amp		35 ns
70121S35JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V		e0	20	225	.015 Amp	19.1262 mm	35 ns
70125S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		35 ns
7014S25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		4KX9	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm		36864 bit	4.5 V		e3				19.1262 mm	25 ns
5962-8700206UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				14.3002 mm	90 ns
HM67B1864-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER					19.1262 mm	9 ns
R1WV6416RSD-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2.7 V	-40 Cel		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm	8.89 mm	Not Qualified	67108864 bit	2.7 V					.000024 Amp	10.79 mm	70 ns
R1WV3216RSD-8SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16		SRAMs	.4 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel		DUAL		R-PDSO-G52		3.6 V	1.2 mm	8.89 mm	Not Qualified	33554432 bit	2.7 V						10.79 mm	85 ns
5962-8700224UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				14.3002 mm	25 ns
5962-8700221UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	35 ns
5962-8700212UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	55 ns
5962-8700211UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				14.3002 mm	70 ns
70121S35JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		35 ns
5962-8700207UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				14.3002 mm	70 ns
5962-8700204UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	55 ns
70121L35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.005 Amp		35 ns
5962-8700220UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	25 ns
7014S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	4KX9	4K		-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3	30	260		19.1262 mm	20 ns
70125L55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		55 ns
7014S12JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER				1.27 mm	85 Cel		4KX9	4K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3				19.1262 mm	12 ns
R1WV6416RSD-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2.7 V	-40 Cel		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm	8.89 mm	Not Qualified	67108864 bit	2.7 V					.000024 Amp	10.79 mm	55 ns
70121S55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		55 ns
5962-8700218UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0				14.3002 mm	35 ns
5962-8700223UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				14.3002 mm	25 ns
70121L25JG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260	.005 Amp	19.1262 mm	25 ns
70125S35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.005 Amp		35 ns
5962-8700217UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				14.3002 mm	35 ns
70121L25JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260	.005 Amp	19.1262 mm	25 ns
70125S55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260	.015 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.