54 SRAM 1,182

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT45W2MW16BBB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	70 ns
MT5LC256K16D4DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES		22.25 mm	35 ns
MT45W2ML16BBB-608WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W4MW16BFB-706LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.0001 Amp	8 mm	70 ns
MT45W4MW16BFB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.0001 Amp	8 mm	70 ns
MT45W2MW16BBB-601LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	60 ns
MT5C256K16B2DJ-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.001 Amp	22.25 mm	15 ns
MT45W2MW16BFB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W256KW16BEGB-701WT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON		1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.7 V		e1			.00001 Amp	8 mm	70 ns
MT45W2MV16BBB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00009 Amp	8 mm	70 ns
MT45W2MV16BBB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	85 ns
MT5LC256K16D4DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54				Not Qualified	4194304 bit			e0			.001 Amp		12 ns
MT45W4MW16BBB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.0001 Amp	8 mm	85 ns
MT45W2ML16BAFB-601LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT5C256K16B2DJ-20LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		e0		YES		22.25 mm	20 ns
MT45W2ML16BBB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00009 Amp	8 mm	85 ns
MT45W2MV16BFB-856IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00011 Amp	8 mm	85 ns
MT5C256K16B2DJ-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		e0		YES		22.25 mm	20 ns
MT45W4ML16BFB-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	85 ns
MT45W4ML16BBB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1	260		.0001 Amp	8 mm	70 ns
MT5LC256K16D4DJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54				Not Qualified	4194304 bit			e0			.001 Amp		15 ns
MT45W2MW16BFB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT45W2MW16BFB-858LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT5C256K16B2DJ-15LXT	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		22.25 mm	15 ns
MT45W4MW16BFB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	85 ns
MT5C256K16B2DJ-35PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		22.25 mm	35 ns
MT45W4MW16BBB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00012 Amp	8 mm	70 ns
MT45W2ML16BBB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W4ML16BFB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	70 ns
MT45W2ML16BAFB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	70 ns
MT45W2ML16BFB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT5LC256K16D4DJ-35LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES		22.25 mm	35 ns
MT45W2MW16BAFB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
MT45W2MW16BBB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	85 ns
MT45W2MW16BAFB-856IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT5LC256K16D4DJ-12L	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES	.0007 Amp	22.25 mm	12 ns
MT45W2MW16BFB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00009 Amp	8 mm	85 ns
MT45W2MV16BFB-851IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W1MW16BDGB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			.00007 Amp	8 mm	70 ns
MT5LC256K16D4DJ-25LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54				Not Qualified	4194304 bit			e0			.0007 Amp		25 ns
MT45W2MW16BABB-608WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260			8 mm	60 ns
MT45W1MW16BAFB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0				8 mm	85 ns
MT5C256K16B2TG-20PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		22.25 mm	20 ns
MT45W1MW16BAFB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0			.00008 Amp	8 mm	70 ns
MT45W4MV16BBB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1	260		.00012 Amp	8 mm	85 ns
MT45W4MV16BFB-608LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0				8 mm	60 ns
MT45W4ML16BBB-608LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1				8 mm	60 ns
MT45W2ML16BAFB-606IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.