54 SRAM 1,182

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT45W2MW16BBB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	70 ns
MT45W2MV16BBB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	85 ns
MT5C256K16B2TG-25LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		22.25 mm	25 ns
MT45W4MV16BBB-608LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1				8 mm	60 ns
MT5LC256K16D4TG-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		22.25 mm	35 ns
MT45W2ML16BABB-601LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT5LC256K16D4DJ-12PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K		-40 Cel		DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V				YES		22.25 mm	12 ns
MT5C256K16B2TG-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		22.25 mm	15 ns
MT45W2ML16BBB-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00011 Amp	8 mm	85 ns
MT5C256K16B2DJ15	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54				Not Qualified	4194304 bit			e0			.002 Amp		15 ns
MT45W2ML16BABB-701LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	70 ns
MT45W4MV16BBB-701LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.0001 Amp	8 mm	70 ns
MT5LC256K16D4DJ-12PXT	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K		-55 Cel		DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V				YES		22.25 mm	12 ns
MT45W2MW16BAFB-601WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-30 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT45W2MW16BBB-608LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	60 ns
MT45W2MW16BFB-606WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	60 ns
MT45W8MW16BGX-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e1	260		.0002 Amp	10 mm	85 ns
MT45W2MV16BABB-606WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W2MW16BFB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W8MW16BGX-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e1	260		.00016 Amp	10 mm	85 ns
MT5LC256K16D4DJ-25P	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0		YES	.001 Amp	22.25 mm	25 ns
MT5C256K16B2DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		22.25 mm	15 ns
MT45W4MW16BFB-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0			.0001 Amp	8 mm	85 ns
MT45W8MW16BGX-706WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e1	260		.0002 Amp	10 mm	70 ns
MT45W2MW16BAFB-606IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT45W2ML16BBB-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00009 Amp	8 mm	85 ns
MT5LC256K16D4TG-15LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				Not Qualified	4194304 bit			e0			.0007 Amp		15 ns
MT5C256K16B2DJ-12LXT	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		22.25 mm	12 ns
MT5LC256K16D4TG-12LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				Not Qualified	4194304 bit			e0			.0007 Amp		12 ns
MT45W2MW16BABB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	85 ns
MT45W2MW16BABB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	70 ns
MT5C256K16B2TG12LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				Not Qualified	4194304 bit			e0			.001 Amp		12 ns
MT45W1MW16BDGB-708ITES	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				8 mm	70 ns
MT45W1MW16BDGB-708ITMS	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				8 mm	70 ns
MT45W2ML16BBB-606WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT5LC256K16D4TG-25LXT	Micron Technology	STANDARD SRAM	MILITARY	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		22.25 mm	25 ns
MT45W2MV16BFB-601WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT5LC256K16D4TG-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		22.25 mm	12 ns
MT45W2MW16BBB-608IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	60 ns
MT45W2ML16BBB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	260		.00011 Amp	8 mm	85 ns
MT45W2MW16BAFB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
MT5C256K16B2TG-20LXT	Micron Technology	STANDARD SRAM	MILITARY	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		22.25 mm	20 ns
MT5LC256K16D4TG-35P	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0		YES	.001 Amp	22.22 mm	35 ns
MT45W2MV16BFB-706WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00011 Amp	8 mm	70 ns
MT5C256K16B2DJ-15PXT	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K		-55 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		22.25 mm	15 ns
MT45W4ML16BBB-701LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.0001 Amp	8 mm	70 ns
MT5C256K16B2TG-35P	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.002 Amp	22.22 mm	35 ns
MT5LC256K16D4TG-20LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				Not Qualified	4194304 bit			e0			.0007 Amp		20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.