54 SRAM 1,182

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HYE18P128160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	134217728 bit	1.7 V	e1				.00025 Amp	8 mm	7 ns
HYE18P32160AC-L9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	e0				.00012 Amp	8 mm	70 ns
HYE18P32160AC-L15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	e0				.00012 Amp	8 mm	85 ns
HYE18P128160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	134217728 bit	1.7 V	e1				.00025 Amp	8 mm	11 ns
HYE18P64160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
CY7S1061G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V						22.415 mm	10 ns
CY7C10612GE30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	3 V			260	YES	.03 Amp	22.415 mm	10 ns
CY7C1061G-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	5.5 V	1.2 mm	10.16 mm		16777216 bit	4.5 V			260			22.415 mm	10 ns
CY7C1069GN30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	3 V						22.415 mm	10 ns
CY7C1069GE30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V			260			22.415 mm	10 ns
CY7C1061GE-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	5.5 V	1.2 mm	10.16 mm		16777216 bit	4.5 V			260			22.415 mm	10 ns
CY14B104LA-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260			22.415 mm	45 ns
CY7C1061GE30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V			260			22.415 mm	10 ns
CY7C1061GE18-15ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm	10.16 mm		16777216 bit	1.65 V			260			22.415 mm	15 ns
CY14B104NA-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	25 ns
CY14B104NA-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	45 ns
CY7C1069GE30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V			260			22.415 mm	10 ns
CY14B108L-ZSP20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	8	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	e3	20	260		.006 Amp	22.415 mm	20 ns
CY7C10612GN30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V		30	260			22.415 mm	10 ns
CY14B108N-ZSP20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	e3	20	260		.01 Amp	22.415 mm	20 ns
CY14B104M-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	25 ns
CY7C1061GN30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	Pure Tin (Sn)	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V		30	260			22.415 mm	10 ns
CY14B101MA-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	25 ns
CY14B104LA-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260			22.415 mm	25 ns
STK14EC16-UF15TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel		256KX16	256K		0 Cel	MATTE TIN	DUAL		R-PDSO-G54	3				Not Qualified	4194304 bit		e3	20	260		.003 Amp		15 ns
CY14B102L-ZSP45XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			75 mA	262144 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	125 Cel		256KX8	256K		-40 Cel		DUAL		R-PDSO-G54					Not Qualified	2097152 bit				260		.005 Amp		45 ns
CY14B101NA-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	45 ns
CY14B108L-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	8	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	e3	20	260		.006 Amp	22.415 mm	25 ns
CY14B101NA-ZSP20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		64KX16	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260			22.415 mm	20 ns
CY7C10612G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	3 V			260	YES	.03 Amp	22.415 mm	10 ns
CY14B108N-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	e3	20	260		.01 Amp	22.415 mm	45 ns
STK14EC16-UF45ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			52 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3				Not Qualified	4194304 bit		e3	20	260		.003 Amp		45 ns
CY14B108L-ZSP20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	8	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	e3	20	260		.006 Amp	22.415 mm	20 ns
CY14B116M-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			95 mA	1048576 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3				Not Qualified	16777216 bit				260		.00075 Amp		25 ns
STK14EC16-UF25TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			65 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel		256KX16	256K		0 Cel	MATTE TIN	DUAL		R-PDSO-G54	3				Not Qualified	4194304 bit		e3	20	260		.003 Amp		25 ns
CY7C1061G-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	5.5 V	1.2 mm	10.16 mm		16777216 bit	4.5 V			260			22.415 mm	10 ns
CY14B104M-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	45 ns
CY14B104LA-ZSP20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260			22.415 mm	20 ns
CY7C1061GN30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V	e3	30	260			22.415 mm	10 ns
CY14E116N-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G54		5.5 V	1.2 mm	10.16 mm		16777216 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			22.415 mm	25 ns
CY7C1061GE18-15ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm	10.16 mm		16777216 bit	1.65 V			260			22.415 mm	15 ns
CY7C1061GE30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V		30	260			22.415 mm	10 ns
STK14EC16-UF15ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			75 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3				Not Qualified	4194304 bit		e3	20	260		.003 Amp		15 ns
CY7C10612G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	3 V			260	YES	.03 Amp	22.415 mm	10 ns
CY7C10612GE30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	3 V			260	YES	.03 Amp	22.415 mm	10 ns
CY14B104K-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.003 Amp	22.415 mm	45 ns
CY14B104K-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e3	20	260		.003 Amp	22.415 mm	25 ns
CY14B101NA-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.005 Amp	22.415 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.