54 SRAM 1,182

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC554161AFT-10L	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			22.22 mm	100 ns
TC554161FTI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	16	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0	YES	.0001 Amp	22.22 mm	85 ns
TC554161FTL-85	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	16	SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G54		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V			YES	.00005 Amp	22.22 mm	85 ns
UPD4416004G5-A12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	4194304 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e0		.01 Amp	22.22 mm	12 ns
UPD4416001G5-C12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	16777216 words	SEPARATE	2.5	2.5	1	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	16MX1	16M	2.38 V	0 Cel	TIN LEAD	DUAL	1, (NON-MUXED)	R-PDSO-G54		2.625 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.375 V		e0		.01 Amp	22.22 mm	12 ns
UPD4416016G5-A12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		12 ns
UPD4416016G5-C12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	1048576 words	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		12 ns
UPD4416008G5-A12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		12 ns
UPD4416001G5-A15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	16777216 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	16MX1	16M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (NON-MUXED)	R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		15 ns
UPD4416004G5-A17-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	4194304 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		17 ns
UPD4416004G5-C15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	4194304 words	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	2.38 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54		2.625 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.375 V		e0		.01 Amp	22.22 mm	15 ns
UPD4416016G5-A17-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		17 ns
UPD4416008G5-A17-9JF-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e6			22.22 mm	15 ns
UPD4416008G5-A17-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e0		.01 Amp	22.22 mm	17 ns
UPD4416016G5-C15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	1048576 words	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		15 ns
UPD4416001G5-A12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	16777216 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	16MX1	16M	3 V	0 Cel	TIN LEAD	DUAL	1, (NON-MUXED)	R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e0		.01 Amp	22.22 mm	12 ns
UPD4416008G5-A15-9JF-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G54		3.6 V	1 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e6		.01 Amp	22.22 mm	15 ns
UPD4416008G5-C15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	2097152 words	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		15 ns
UPD4416016G5-A15-9JF-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e6		.01 Amp	22.22 mm	15 ns
UPD4416004G5-A15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	4194304 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		15 ns
UPD4416001G5-A17-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	16777216 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	16MX1	16M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (NON-MUXED)	R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		17 ns
UPD4416008G5-A15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54		3.6 V	1 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e0		.01 Amp	22.22 mm	15 ns
UPD4416001G5-C15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	16777216 words	SEPARATE	2.5	2.5	1	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	16MX1	16M	2.38 V	0 Cel	TIN LEAD	DUAL	1, (NON-MUXED)	R-PDSO-G54		2.625 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.375 V		e0		.01 Amp	22.22 mm	15 ns
UPD4416016G5-A15-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e0		.01 Amp	22.22 mm	15 ns
UPD4416004G5-C12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	4194304 words	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	2.38 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54		2.625 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.375 V		e0		.01 Amp	22.22 mm	12 ns
UPD4416008G5-C12-9JF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2097152 words	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	16777216 bit			e0		.01 Amp		12 ns
K1B1616B2B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit							70 ns
K1B1616B2B-HI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1B6416B2D-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54	1	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V				.00012 Amp	8 mm	70 ns
K1B1616B2B-BI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1B1616B2B-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54	1	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V					8 mm	70 ns
K1B3216BDD-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.85		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B54		2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V					8 mm	70 ns
K1B6416B6C-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.85		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54		2 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V					8 mm	70 ns
K1B1616B8B-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V					8 mm	70 ns
K1C6416B8D-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V					8 mm	70 ns
K1B6416B8D-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V				.00012 Amp	8 mm	70 ns
K1B3216BDE-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V					8 mm	70 ns
K1B1616B2B-BI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1B1616B2B-BI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1C6416B2D-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V					8 mm	70 ns
K1B1616B2B-HI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1B3216B8E-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V					8 mm	70 ns
K1B1616B2B-HI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit			e3				70 ns
K1C6416B8E-I	Samsung	PSEUDO STATIC RAM	OTHER	54	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY					85 Cel		4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B54		1.95 V		6 mm	Not Qualified	67108864 bit	1.7 V	ALSO OPERATES IN SYNCHRONOUS BURST MODE				8 mm	70 ns
K1B1616B2B-FI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54	1				Not Qualified	16777216 bit							70 ns
MT5LC256K16D4DJ-35PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL	1	R-PDSO-J54		3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V			YES		22.25 mm	35 ns
MT45W2ML16BABB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1			8 mm	85 ns
MT45W2ML16BAFB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			8 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.