60 SRAM 9

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY14B116N-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	60	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3	3.6 V	1.2 mm	10 mm		16777216 bit	2.7 V		e1	260		18 mm	25 ns
CY14B116N-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	60	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3	3.6 V	1.2 mm	10 mm		16777216 bit	2.7 V		e1	260		18 mm	25 ns
CY62167ESL-55FNXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.55 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B60		1.95 V	.568 mm	4.654 mm		16777216 bit	1.65 V	IT ALSO OPERATES AT 3V AND 5V NOMINAL SUPPLY				5.814 mm	55 ns
7M1004S40C	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	60	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	500 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP60,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX9	8K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-XDIP-T60					Not Qualified	73728 bit			e0		.06 Amp		40 ns
HB66A2568A-35	Renesas Electronics	SRAM MODULE	COMMERCIAL	60		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel		256KX8	256K		0 Cel		ZIG-ZAG		R-XZMA-T60		5.5 V	13.34 mm		Not Qualified	2097152 bit	4.5 V					87.63 mm	35 ns
7M1005S40C	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	60	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	870 mA	16384 words	COMMON	5	5	9	IN-LINE	DIP60,.6	SRAMs	2.54 mm	70 Cel	3-STATE	16KX9	16K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-XDIP-T60					Not Qualified	147456 bit			e0		.12 Amp		40 ns
HB66A2568A-25	Renesas Electronics	SRAM MODULE	COMMERCIAL	60		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel		256KX8	256K		0 Cel		ZIG-ZAG		R-XZMA-T60		5.5 V	13.34 mm		Not Qualified	2097152 bit	4.5 V					87.63 mm	25 ns
IDT7M1004S40C	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	60	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	500 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP60,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX9	8K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-XDIP-T60					Not Qualified	73728 bit			e0		.06 Amp		40 ns
IDT7M1005S40C	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	60	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	870 mA	16384 words	COMMON	5	5	9	IN-LINE	DIP60,.6	SRAMs	2.54 mm	70 Cel	3-STATE	16KX9	16K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-XDIP-T60					Not Qualified	147456 bit			e0		.12 Amp		40 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.