68 SRAM 1,929

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7006S20GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0				.015 Amp	29.464 mm	20 ns
7007S55GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	262144 bit	4.5 V		e3				.03 Amp		55 ns
IDT7133SA25GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	265 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel	3-STATE	2KX16	2K		0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3			YES		29.464 mm	25 ns
IDT7006L35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	290 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.0015 Amp	29.464 mm	35 ns
IDT7005L55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	210 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	65536 bit	4.5 V		e3				.0015 Amp	24.0792 mm	55 ns
IDT70V05L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	30	260		.0025 Amp	24.2062 mm	25 ns
IDT7006L20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.0015 Amp	27.889 mm	20 ns
IDT70V07L25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	25 ns
IDT70V07L25GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		3.6 V	5.207 mm	29.464 mm	Not Qualified	262144 bit	3 V		e0					29.464 mm	25 ns
IDT7007L55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	55 ns
IDT7006L20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.0015 Amp	24.2062 mm	20 ns
IDT7133LA70JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V	4.57 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	70 ns
IDT7006L35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	35 ns
7005L20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	.8 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3				.004 Amp	24.2062 mm	20 ns
IDT7007S25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns
7005L15JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.0015 Amp	24.2062 mm	15 ns
IDT7143LA20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e3					29.464 mm	20 ns
IDT70V06S15G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	215 mA	16384 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		3.6 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	3 V		e0				.005 Amp	29.464 mm	15 ns
7005L35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		8KX8	8K		0 Cel		QUAD		S-PQCC-J68		5.5 V		24.2062 mm		65536 bit	4.5 V			30	260			24.2062 mm	35 ns
IDT7133SA55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	55 ns
IDT7133SA25FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		16	FLATPACK			1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e3					24.0792 mm	25 ns
IDT7006S55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	24.0792 mm	55 ns
7005S25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	65536 bit	4.5 V			30	260			24.2062 mm	25 ns
IDT70V06S20GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	GRID ARRAY			2.54 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		3.6 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	3 V		e3					29.464 mm	20 ns
IDT7133LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.57 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	30	260	YES	.0015 Amp	24.2062 mm	20 ns
IDT7006L15GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.0015 Amp	27.889 mm	15 ns
IDT7006L70JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	70 ns
IDT7006S20F	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.015 Amp	24.0792 mm	20 ns
IDT7006S17JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.015 Amp	24.2062 mm	17 ns
IDT7006S25GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	29.464 mm	25 ns
IDT7006L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.0015 Amp	24.2062 mm	25 ns
IDT7005L25	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		8	GRID ARRAY			2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	65536 bit	4.5 V		e0					29.464 mm	25 ns
7005L20JB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1				Not Qualified	65536 bit			e0	20	225		.004 Amp		20 ns
7005L70GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		70 ns
IDT7006L70JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	70 ns
IDT7007L55GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-XPGA-P68					Not Qualified	262144 bit			e3				.01 Amp		55 ns
7005L55G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68					Not Qualified	65536 bit			e0				.0015 Amp		55 ns
IDT7143SA25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	QUAD		S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e3					24.0792 mm	25 ns
IDT7005S55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	65536 bit	4.5 V		e3				.015 Amp	24.0792 mm	55 ns
IDT7006S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	370 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
IDT70V07L55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	55 ns
7005L15GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	8192 words		5		8	GRID ARRAY				70 Cel		8KX8	8K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V				65536 bit	4.5 V			30	260				15 ns
IDT7133SA25GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	29.464 mm	25 ns
7005L25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		25 ns
IDT70V07S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	35 ns
IDT7143SA25GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		16	GRID ARRAY			2.54 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e3					29.464 mm	25 ns
7005L55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		8	FLATPACK			.8 mm	125 Cel		8KX8	8K		-55 Cel	MATTE TIN	QUAD		S-PQFP-F68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3					24.2062 mm	55 ns
IDT7006L45FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0			YES	.004 Amp	24.0792 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.