68 SRAM 1,929

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7007L35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	255 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.005 Amp	24.2062 mm	35 ns
IDT70V05S55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	65536 bit	3 V		e3					24.2062 mm	55 ns
7005L35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		35 ns
7005L35GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	8192 words		5		8	GRID ARRAY				125 Cel		8KX8	8K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V			30	260				35 ns
IDT7133SA20FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel	3-STATE	2KX16	2K		0 Cel	MATTE TIN	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3			YES		24.0792 mm	20 ns
IDT70V06S35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V		e3					24.2062 mm	35 ns
7005L70JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V		24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	70 ns
IDT7006S55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	325 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
IDT7006S45JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	340 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX8	16K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e3			YES		24.2062 mm	45 ns
IDT7006L70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V		e3				.004 Amp	24.0792 mm	70 ns
IDT7143LA55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.57 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	55 ns
IDT7007S55GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	PERPENDICULAR	2	S-XPGA-P68					Not Qualified	262144 bit			e3				.03 Amp		55 ns
IDT7133SA70G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.0015 Amp	29.464 mm	70 ns
IDT7143SA70FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	QUAD		S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e3					24.0792 mm	70 ns
7005L55FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	.8 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3				.004 Amp	24.2062 mm	55 ns
7005S55GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	325 mA	8192 words		5		8	GRID ARRAY				85 Cel		8KX8	8K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V				65536 bit	4.5 V		e3						55 ns
IDT7007L55GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	262144 bit	4.5 V		e3				.01 Amp	29.464 mm	55 ns
IDT7006S70FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	24.0792 mm	70 ns
IDT7133LA45JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	45 ns
IDT7006S70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	24.0792 mm	70 ns
IDT7133LA90FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	24.0792 mm	90 ns
7005L35FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		8	FLATPACK			.8 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQFP-F68		5.5 V	4.572 mm	24.2062 mm		65536 bit	4.5 V		e3					24.2062 mm	35 ns
IDT7005S17FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	65536 bit	4.5 V		e3				.015 Amp	24.0792 mm	17 ns
IDT7005S55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	55 ns
IDT7143SA55G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.0015 Amp	29.464 mm	55 ns
IDT7005S15GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	65536 bit	4.5 V		e3				.015 Amp	29.464 mm	15 ns
IDT7005L35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	290 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0			YES	.0015 Amp	29.464 mm	35 ns
IDT7143SA90GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e3					29.464 mm	90 ns
IDT7143LA55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e3					29.464 mm	55 ns
IDT7143LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	25 ns
IDT7005L35	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		8	GRID ARRAY			2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	65536 bit	4.5 V		e0					29.464 mm	35 ns
IDT7006S25GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	265 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.015 Amp	27.889 mm	25 ns
IDT7005L55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	55 ns
IDT7143LA25G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	270 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.0015 Amp	29.464 mm	25 ns
7005L20G	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	240 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0	NOT SPECIFIED	240		.0015 Amp	29.464 mm	20 ns
IDT7015L17	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		9	GRID ARRAY			2.54 mm	70 Cel		8KX9	8K		0 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	73728 bit	4.5 V		e0					29.464 mm	17 ns
IDT70V06S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX8	16K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	25 ns
IDT7005S70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	65536 bit	4.5 V		e3				.03 Amp	24.0792 mm	70 ns
7005S25JB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	340 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1				Not Qualified	65536 bit			e0	20	225		.03 Amp		25 ns
7005S55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.015 Amp		55 ns
IDT7006S20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	290 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.015 Amp	24.2062 mm	20 ns
IDT7143LA25FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	25 ns
IDT7133LA35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e3					29.464 mm	35 ns
7005L17GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.0015 Amp		17 ns
7005S55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V		24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	55 ns
IDT7143LA70FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	QUAD		S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e3					24.0792 mm	70 ns
IDT7143LA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	24.0792 mm	55 ns
IDT7005S55JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V		e0	20	225		.03 Amp	24.2062 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.