Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
210 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
24.2062 mm |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
35 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
90 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
16384 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
QFL68,.95SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQCC-J68 |
5.5 V |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
.0015 Amp |
24.2062 mm |
17 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
16 |
FLATPACK |
85 Cel |
2KX16 |
2K |
-40 Cel |
QUAD |
S-PQFP-F68 |
5.5 V |
32768 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
MILITARY |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-F68 |
5.5 V |
24.0792 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.03 Amp |
24.0792 mm |
55 ns |
|||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
J BEND |
PARALLEL |
ASYNCHRONOUS |
310 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
PGA68,11X11 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
24.2062 mm |
55 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
GRID ARRAY |
2.54 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
PERPENDICULAR |
S-CPGA-P68 |
3.6 V |
5.207 mm |
29.464 mm |
Not Qualified |
131072 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
29.464 mm |
35 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
285 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
55 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
310 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
15 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
400 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F68 |
5.5 V |
3.683 mm |
24.0792 mm |
Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
e0 |
YES |
.03 Amp |
24.0792 mm |
45 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
PERPENDICULAR |
2 |
S-CPGA-P68 |
1 |
5.5 V |
3.683 mm |
29.464 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
NOT SPECIFIED |
240 |
.015 Amp |
29.464 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-PPGA-P68 |
5.5 V |
3.683 mm |
29.464 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.015 Amp |
29.464 mm |
35 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F68 |
5.5 V |
3.05 mm |
24 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
24.08 mm |
45 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
20 |
225 |
.004 Amp |
24.2062 mm |
55 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
395 mA |
16384 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P68 |
1 |
5.5 V |
5.207 mm |
29.464 mm |
Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
e0 |
240 |
YES |
.03 Amp |
29.464 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
5.207 mm |
29.464 mm |
Qualified |
32768 bit |
4.5 V |
ARBITER |
NOT SPECIFIED |
NOT SPECIFIED |
29.464 mm |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
35 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
295 mA |
16384 words |
5 |
8 |
GRID ARRAY |
2.54 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
2.413 mm |
27.889 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
27.889 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
J BEND |
PARALLEL |
ASYNCHRONOUS |
295 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
55 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
24.2062 mm |
15 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
45 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
J BEND |
PARALLEL |
ASYNCHRONOUS |
315 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
55 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
GRID ARRAY |
70 Cel |
16KX8 |
16K |
0 Cel |
PERPENDICULAR |
S-CPGA-P68 |
3.6 V |
131072 bit |
3 V |
20 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-N68 |
3 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
NOT SPECIFIED |
260 |
.0015 Amp |
20 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F68 |
5.5 V |
3.683 mm |
24.0792 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
.0015 Amp |
24.0792 mm |
20 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
175 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
165 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
200 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
225 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.015 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
175 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
215 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
185 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
225 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.015 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
215 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
200 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
165 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.0025 Amp |
24.2062 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
195 mA |
16384 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
195 mA |
8192 words |
COMMON |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC68,1.0SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J68 |
1 |
3.6 V |
4.572 mm |
24.2062 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
.005 Amp |
24.2062 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
PGA68,11X11 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
24.2062 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3.6 V |
4.57 mm |
24.2062 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
24.2062 mm |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
GRID ARRAY |
70 Cel |
2KX16 |
2K |
0 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
32768 bit |
4.5 V |
55 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
24.2062 mm |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
35 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
8 |
GRID ARRAY |
2.54 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
5.207 mm |
29.464 mm |
Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
29.464 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
260 |
24.2062 mm |
20 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.