Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J84 |
1 |
5.5 V |
4.57 mm |
29.3116 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
30 |
225 |
.01 Amp |
29.3116 mm |
20 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J84 |
1 |
5.5 V |
4.57 mm |
29.3116 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE |
e0 |
30 |
225 |
.01 Amp |
29.3116 mm |
20 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J84 |
1 |
3.6 V |
4.572 mm |
29.2862 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
30 |
225 |
.003 Amp |
29.2862 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQCC-J84 |
1 |
3.6 V |
4.572 mm |
29.2862 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
30 |
225 |
.003 Amp |
29.2862 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
MATTE TIN |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
27.94 mm |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQCC-J84 |
1 |
5.5 V |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
30 |
225 |
.004 Amp |
29.3116 mm |
70 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
125 Cel |
4KX16 |
4K |
-55 Cel |
QUAD |
S-PQFP-G84 |
5.5 V |
65536 bit |
4.5 V |
70 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
CHIP CARRIER |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQCC-J84 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
29.3116 mm |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class Q |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
330 mA |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
27.94 mm |
131072 bit |
4.5 V |
27.94 mm |
25 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQCC-J84 |
3 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
40 |
260 |
.0015 Amp |
29.3116 mm |
17 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
325 mA |
4096 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
85 Cel |
4KX16 |
4K |
-40 Cel |
MATTE TIN |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
27.94 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
335 mA |
16384 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
4.5 V |
-40 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.03 Amp |
35 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
310 mA |
8192 words |
5 |
16 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
29.3116 mm |
131072 bit |
4.5 V |
29.3116 mm |
15 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
125 Cel |
16KX16 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
35 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.00003 Amp |
70 ns |
||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
285 mA |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
27.94 mm |
131072 bit |
4.5 V |
27.94 mm |
55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
CHIP CARRIER |
85 Cel |
16KX16 |
16K |
-40 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
262144 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
85 Cel |
16KX16 |
16K |
-40 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
125 Cel |
16KX16 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-J84 |
3 |
5.5 V |
4.57 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
NOT SPECIFIED |
260 |
.0015 Amp |
29.3116 mm |
15 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
CHIP CARRIER |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
70 Cel |
16KX16 |
16K |
0 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
15 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
330 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
5.207 mm |
27.94 mm |
Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
e0 |
240 |
YES |
.004 Amp |
27.94 mm |
70 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
FLAT |
PARALLEL |
ASYNCHRONOUS |
370 mA |
8192 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
QUAD |
S-PQFP-F84 |
5.5 V |
29.21 mm |
131072 bit |
4.5 V |
29.21 mm |
20 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.000015 Amp |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.004 Amp |
35 ns |
||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.000015 Amp |
27.94 mm |
35 ns |
||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
NOT SPECIFIED |
240 |
.004 Amp |
27.94 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
370 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-PQCC-J84 |
3 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
40 |
260 |
.00003 Amp |
29.3116 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.004 Amp |
27.94 mm |
25 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
70 Cel |
16KX16 |
16K |
0 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F84 |
5.5 V |
3.556 mm |
29.21 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
e0 |
29.21 mm |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class Q |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
325 mA |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
27.94 mm |
131072 bit |
4.5 V |
27.94 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
J BEND |
PARALLEL |
ASYNCHRONOUS |
300 mA |
8192 words |
5 |
16 |
CHIP CARRIER |
1.27 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
29.3116 mm |
131072 bit |
4.5 V |
29.3116 mm |
25 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
70 Cel |
16KX16 |
16K |
0 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
16 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQCC-J84 |
5.5 V |
4.572 mm |
29.3116 mm |
131072 bit |
4.5 V |
e3 |
40 |
260 |
29.3116 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
85 Cel |
4KX16 |
4K |
-40 Cel |
QUAD |
S-PQFP-G84 |
5.5 V |
65536 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
CHIP CARRIER |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQCC-J84 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
29.3116 mm |
20 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
CHIP CARRIER |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
FLAT |
PARALLEL |
ASYNCHRONOUS |
330 mA |
8192 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
QUAD |
S-PQFP-F84 |
5.5 V |
29.21 mm |
131072 bit |
4.5 V |
29.21 mm |
25 ns |
||||||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
250 mA |
8192 words |
COMMON |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
2.54 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
3.68 mm |
27.94 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e0 |
240 |
YES |
.015 Amp |
27.94 mm |
55 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
GRID ARRAY |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE |
e3 |
YES |
70 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
5 |
16 |
CHIP CARRIER |
2.54 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J84 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
29.3116 mm |
35 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
70 Cel |
4KX16 |
4K |
0 Cel |
QUAD |
S-PQFP-G84 |
5.5 V |
65536 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-PQCC-J84 |
3 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
40 |
260 |
.00003 Amp |
29.3116 mm |
35 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
305 mA |
16384 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
4.5 V |
-40 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.01 Amp |
25 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class Q |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
295 mA |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
27.94 mm |
131072 bit |
4.5 V |
27.94 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
290 mA |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
27.94 mm |
131072 bit |
4.5 V |
27.94 mm |
20 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.