84 SRAM 1,084

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7026L20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY			2.54 mm	125 Cel		16KX16	16K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	262144 bit	4.5 V	16K X 16 DUAL PORT SRAM	e3					27.94 mm	20 ns
IDT7025S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX16	8K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e3			YES		29.3116 mm	35 ns
IDT7026L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	85 Cel		16KX16	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	262144 bit	4.5 V	16K X 16 DUAL PORT SRAM	e3	40	260			29.3116 mm	20 ns
IDT7024L15G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.0015 Amp	27.94 mm	15 ns
IDT7024S35FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	29.21 mm	35 ns
IDT7024L35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.004 Amp	29.3116 mm	35 ns
IDT70V24L55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	4096 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX16	4K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	3.6 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	30	225		.005 Amp	29.3116 mm	55 ns
IDT7026S20GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	355 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX16	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	262144 bit	4.5 V	16K X 16 DUAL PORT SRAM	e0				.03 Amp	27.94 mm	20 ns
IDT70V24L35JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	4096 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX16	4K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	3.6 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	30	225		.005 Amp	29.3116 mm	35 ns
70V25S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	131072 bit	3 V		e3	40	260		.015 Amp	29.3116 mm	20 ns
IDT7025L55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK			1.27 mm	85 Cel		8KX16	8K		-40 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	131072 bit	4.5 V		e0					29.21 mm	55 ns
IDT7026L20JBG	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		16KX16	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	262144 bit	4.5 V	16K X 16 DUAL PORT SRAM	e3					29.3116 mm	20 ns
IDT7024S17FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V		e3				.000015 Amp	29.21 mm	17 ns
70V25S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	8192 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	131072 bit	3 V		e3	40	260		.005 Amp	29.3116 mm	25 ns
IDT7024L35GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	27.94 mm	35 ns
7008S35GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	65536 words	COMMON	5	5	8	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V			Not Qualified	524288 bit	4.5 V		e3				.015 Amp		35 ns
IDT7025L15JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3					29.3116 mm	15 ns
IDT70V26L35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	3.3	3.3	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		3.6 V	5.207 mm	30.6705 mm	Not Qualified	262144 bit	3 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.003 Amp	30.6705 mm	35 ns
7008S35GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	30.48 mm	Not Qualified	524288 bit	4.5 V		e0				.03 Amp	30.48 mm	35 ns
IDT7026S20GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	355 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	16KX16	16K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	262144 bit	4.5 V	16K X 16 DUAL PORT SRAM	e0				.03 Amp	27.94 mm	20 ns
IDT7024L20FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	29.21 mm	20 ns
IDT7024S20GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	340 mA	4096 words		5		16	GRID ARRAY			2.54 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V		e3					27.94 mm	20 ns
70V25L35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	8192 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	131072 bit	3 V		e3	40	260		.0025 Amp	29.3116 mm	35 ns
IDT70V26S55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	3.3	3.3	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		3.6 V	5.207 mm	30.6705 mm	Not Qualified	262144 bit	3 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES	.006 Amp	30.6705 mm	55 ns
IDT7025L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX16	8K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3			YES		29.3116 mm	25 ns
70V24S20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		3.3		16	CHIP CARRIER			1.27 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J84		3.6 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					29.3116 mm	20 ns
IDT7024S35GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	27.94 mm	35 ns
IDT7025L55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX16	8K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3			YES		29.3116 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.