BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1062G30-10BGXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY				1.27 mm	85 Cel			512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260			22 mm	10 ns
RMLV1616AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		16	GRID ARRAY	BGA48,6X8,30	8		.75 mm	85 Cel			1MX16	1M	2.7 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		16777216 bit	2.7 V	CAN ALSO BE ORGANISED AS 2M X 8				YES	.0003 Amp	8.5 mm	55 ns
71T75602S100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	195 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	5 ns
71T75602S150BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.8 ns
71T75602S166BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.5 ns
71V2556SA100BGGI8	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	5 ns
71V3556SA133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	22 mm	4.2 ns
71V3556SA166BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	22 mm	3.5 ns
71V35761S183BGGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns
71V35761SA166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.5 ns
71V35761SA166BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V		166 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp		3.5 ns
71V35761SA200BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.1 ns
71V3577S75BGGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel	NO	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1		260	YES	.035 Amp	22 mm	7.5 ns
71V65703S85BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					85 Cel			256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V					9437184 bit	3.135 V	FLOW-THROUGH	e1	30	260				8.5 ns
71V67603S133BGGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.07 Amp	22 mm	4.2 ns
71V67703S75BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	22 mm	7.5 ns
71V67703S80BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	22 mm	8 ns
IDT71T75602S166BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.5 ns
IDT71V3556SA166BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3			166 MHz	13 mm	Not Qualified	4718592 bit			e1	30	260		.045 Amp	15 mm	3.5 ns
IDT71V65703S85BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel			256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8.5 ns
IDT71V67703S75BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			117 MHz		Not Qualified	9437184 bit			e1	30	260		.07 Amp		7.5 ns
R1LV1616HBG-4SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY					85 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V				Not Qualified	16777216 bit	2.7 V								45 ns
RMWV6416AGBG-5S2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		3		16	GRID ARRAY		8			85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V					67108864 bit	2.7 V								55 ns
70V3599S166BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V		e0	20	225		.03 Amp		4 ns
CY7C1520KV18-250BZIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	530 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit									.45 ns
70V3599S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp		3.6 ns
71T75602S100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	5 ns
71T75602S100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	195 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	5 ns
71T75602S100BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	195 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.06 Amp	22 mm	5 ns
71T75602S133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	4.2 ns
71T75602S133BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.06 Amp	22 mm	4.2 ns
71T75602S166BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.5 ns
71T75602S166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.06 Amp	22 mm	3.5 ns
71T75802S100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	195 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	5 ns
71T75802S166BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.5 ns
71T75802S166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.045 Amp	22 mm	3.5 ns
71T75802S200BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	200 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225			22 mm	3.2 ns
71V2556SA100BGG8	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	5 ns
71V2556SA133BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	4.2 ns
71V2556SA133BGI8	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.045 Amp	22 mm	4.2 ns
71V25761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
71V3556SA100BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225		.045 Amp	22 mm	5 ns
71V3556SA133BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	22 mm	4.2 ns
71V3556SA166BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.04 Amp	22 mm	3.5 ns
71V3556SA166BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	22 mm	3.5 ns
71V3556SA166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225		.045 Amp	22 mm	3.5 ns
71V3557S75BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	22 mm	7.5 ns
71V3557S75BGI8	Integrated Device Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel			128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225			22 mm	7.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.