BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM69R738AZP5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.15 V			YES	.05 Amp	22 mm	2.5 ns
MCM63P919ZP166R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3.5 ns
MCM63L836AFC5.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	5 ns
MCM63F819KZP9R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	9 ns
MPC2605ZP66	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K			BOTTOM		S-PBGA-B241		3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE				25 mm	8.5 ns
MCM69F737ZP8.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		22 mm	8.5 ns
MCM63P818ZP66	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	7 ns
MCM63F819ZP8.5R	NXP Semiconductors	CACHE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON	3.3		18	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel		256KX18	256K	3.125 V		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	90 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	22 mm	8.5 ns
MCM6341ZP12	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	70 Cel		128KX24	128K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V					22 mm	12 ns
MCM63F819KZP9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	9 ns
MCM63Z916ZP10R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				22 mm	10 ns
MCM63R836AFC3.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.5 ns
MCM63P919ZP200R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3 ns
MCM69F737ZP11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		22 mm	11 ns
MCM63L836AFC4.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	4 ns
MCM64Z834ZP11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V		BOTTOM		R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE			.01 Amp	22 mm	11 ns
MCM63R836FC3.3	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.65 ns
MCM69R736CZP6R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K			BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM63R918AFC3.3	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.65 ns
MCM63R918AFC3.0R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.5 ns
MCM67Q909ZP12R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	86	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	524288 words	SEPARATE	5	5	9	GRID ARRAY	BGA86,9X10	SRAMs	1.524 mm	70 Cel	3-STATE	512KX9	512K		TIN LEAD	BOTTOM	1	R-PBGA-B86		5.25 V	2.44 mm	83 MHz	16.26 mm	Not Qualified	4718592 bit	4.75 V		e0	YES		17.78 mm	5 ns
MCM64Z834ZP15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V		BOTTOM		R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE			.01 Amp	22 mm	15 ns
MCM67Q709AZP10R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	86	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	131072 words	SEPARATE	5	5	9	GRID ARRAY	BGA86,9X10	SRAMs	1.524 mm	70 Cel	3-STATE	128KX9	128K		TIN LEAD	BOTTOM	1	R-PBGA-B86		5.25 V	2.44 mm		16.26 mm	Not Qualified	1179648 bit	4.75 V	SELF TIMED WRITE; BOUNDARY SCAN	e0	YES		17.78 mm	5 ns
MCM63L836AFC5.0R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	5 ns
MCM63P819KZP166R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	3.5 ns
MCM63R918FC3.7	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.85 ns
MCM63P919ZP200	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3 ns
MCM69R819AZP8R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.15 V					22 mm	3.5 ns
MCM63Z916ZP11	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				22 mm	11 ns
MCM63F819ZP10R	NXP Semiconductors	CACHE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3		18	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel		256KX18	256K	3.125 V		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	66 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	22 mm	10 ns
MCM69P818ZP4R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0			22 mm	4 ns
MCM63Z916ZP11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				22 mm	11 ns
MCM69R818CZP5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM63R836AFC3.3R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.65 ns
MCM63R918AFC3.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.5 ns
MCM64E918FC4.0R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm
MCM69R818CZP4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM63R818FC3.3	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V					22 mm	1.65 ns
MCM63P819KZP166	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	3.5 ns
MCM63R736FC3R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V					22 mm	1.5 ns
MCM63R918FC4.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	2 ns
MCM69R737AZP6R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K			BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.15 V					22 mm	3 ns
MCM69R820CZP6R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM69R818CZP4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K			BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM69R618ZP8	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.15 V		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	1179648 bit	3.15 V					22 mm	4 ns
MCM63R918AFC4.0	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	2 ns
MCM69R820AZP5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	490 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V		BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit					.05 Amp		2.5 ns
MCM63R736FC3	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K			BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V					22 mm	1.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.