BGA SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MCM69P818ZP3.8	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				22 mm	3.8 ns
MCM69L818CZP5.5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V						22 mm	5.5 ns
MCM63P818ZP66R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE					22 mm	7 ns
MCM63Z834ZP15	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	15 ns
MCM69P737ZP4	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	375 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				.045 Amp	22 mm	4 ns
MCM63F819KZP8.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					22 mm	8.5 ns
MCM69P818ZP4	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				22 mm	4 ns
MCM67Q909ZP10R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	86	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	524288 words	SEPARATE	5	5	9	GRID ARRAY	BGA86,9X10	SRAMs	1.524 mm	70 Cel	3-STATE	512KX9	512K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B86		5.25 V	2.44 mm	100 MHz	16.26 mm	Not Qualified	4718592 bit	4.75 V		e0				17.78 mm	5 ns
MCM69R818CZP4.4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V						22 mm	2.2 ns
MCM63R736FC4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V						22 mm	2 ns
MCM69L818CZP7.5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V						22 mm	7.5 ns
CYD09S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.2 Amp	23 mm	9 ns
ICY7C1367B-166BGI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B119				166 MHz		Not Qualified	9437184 bit						.03 Amp		3.5 ns
CY7S1062G-10BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		32	GRID ARRAY			1.27 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B119		2.2 V	2.02 mm		14 mm		16777216 bit	1.65 V	IT ALSO OPERATES AT 3V NOMINAL SUPPLY					22 mm	10 ns
CYD18S72V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	4 ns
CYD18S72V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S18V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD18S72V-133BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	133 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5 ns
CYD36S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	4 ns
GVT71512B36B-8	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	9437184 bit			e0			.01 Amp		9 ns
ICY7C1387DV25-167BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			167 MHz		Not Qualified	18874368 bit			e1	20	260	.07 Amp		3.4 ns
CYD18S72V-100BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	256KX72	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5.2 ns
CYD18S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S72V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1430 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD18S72V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5.2 ns
CYD09S72V18-167BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	167 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1			.2 Amp	23 mm	11 ns
CY7S1062G-15BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		32	GRID ARRAY			1.27 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B119		2.2 V	2.02 mm		14 mm		16777216 bit	1.65 V	IT ALSO OPERATES AT 3V NOMINAL SUPPLY					22 mm	15 ns
ICY7C1373DV25-100BGI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel		BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	18874368 bit						.11 Amp		8.5 ns
CYD36S36V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	4 ns
CYD18S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	980 mA	262144 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.3 Amp	23 mm	9 ns
CYD36S18V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns
CYD36S36V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD09S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1	40	260		23 mm	3.3 ns
CYD18S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1	40	260		23 mm	4 ns
CYD09S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1				23 mm	4 ns
CYD36S72V18-167BGI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1730 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	167 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0			.7 Amp	27 mm	4 ns
CYD36S72V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1550 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns
CYD36S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S36V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1330 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns
CY7C1360C-166BGI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.04 Amp	22 mm	3.5 ns
CY7C0430V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	1310720 bit						.01 Amp		4 ns
CY7C1614KV18-250BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY				85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V				Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1
CY7C1062GN30-10BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY			1.27 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260		22 mm	10 ns
CY7C0450V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	1310720 bit						.00001 Amp		4 ns
CY7C0452V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	5242880 bit						.01 Amp		3.5 ns
CY7C1360C-200BGC	Infineon Technologies	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220	.04 Amp	22 mm	3 ns
CY7C1614KV18-300BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY				85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V				Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1
CY14B116M-BZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			95 mA	1048576 words			3/3.3	16	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3					Not Qualified	16777216 bit			e1		260	.00075 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.