BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS2045L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY				1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0				27 mm	100 ns
DS2030AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50		SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS2045W-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY				1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY				1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	70 ns
DS2030AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY				1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	70 ns
DS2050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY				1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS2065W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY				1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V		e0				27 mm	100 ns
TC55WK837XB-300	Toshiba	CACHE SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B153		2.625 V	2.26 mm		14 mm	Not Qualified	9437184 bit	2.375 V						22 mm	.4 ns
TC55YK1636XB-500	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2.3 ns
TC55YD1837YB-333	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	1.6 ns
TC55YD1819YB-333	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	1.6 ns
TC55YK1618AYB-800	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY				1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.2 ns
TC55YK1636AYB-500	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY				1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.3 ns
TC55YK1636XB-400	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2.5 ns
TC55YK1636AYB-800	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY				1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.2 ns
TC55YK1618AYB-500	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY				1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.3 ns
TC55YD1873YB-250	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	2.1 ns
TC55YK1636XB-666	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2 ns
TC55YK1636AYB-666	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY				1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.2 ns
TC55YK1618XB-666	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2 ns
TC55YD1873YB-333	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	1.6 ns
TC55YK1618XB-500	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2.3 ns
TC55YD1819YB-250	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	2.1 ns
TC55YK1618XB-400	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153						Not Qualified	18874368 bit			e0			.02 Amp		2.5 ns
TC55YD1837YB-250	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0				22 mm	2.1 ns
TC55YK1618AYB-666	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY				1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0				22 mm	.2 ns
TC55WK837XB-333	Toshiba	CACHE SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B153		2.625 V	2.26 mm		14 mm	Not Qualified	9437184 bit	2.375 V						22 mm	.4 ns
71P71204S300BQ8	Renesas Electronics	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm		3-STATE	2MX8	2M	1.7 V		TIN LEAD	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	16777216 bit			e0					.45 ns
70V7519S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						4.2 ns
R1WV6416RBG-5SR	Renesas Electronics	STANDARD SRAM		48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	GRID ARRAY	BGA48,6X8,30	8	SRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	2.7 V	0 Cel		BOTTOM		R-PBGA-B48	1	3.6 V				Not Qualified	67108864 bit	2.7 V					.000024 Amp		55 ns
R1Q2A3618ABG-60R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				167 MHz		Not Qualified	37748736 bit						.33 Amp		.5 ns
70T3719MS133BBG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY					70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B324		2.6 V					18874368 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1					15 ns
72T633S12BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		18	GRID ARRAY					70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B208	3	2.6 V				Not Qualified	9437184 bit	2.4 V		e1					12 ns
R1QAA3636CBG-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				500 MHz		Not Qualified	37748736 bit						.87 Amp		.45 ns
70V3379S6BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225	.015 Amp		6 ns
70V7519S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						3.6 ns
70T3539MS133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	740 mA	524288 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	18874368 bit			e1	30	260	.02 Amp		15 ns
70T3539MS133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	18874368 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.025 Amp		15 ns
70T631S10BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260	.02 Amp		10 ns
R1QDA7236ABG-22IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1130 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit						.81 Amp		.45 ns
70V3379S6BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260	.015 Amp	17 mm	6 ns
R1WV6416RBG-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	GRID ARRAY	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	2.7 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V				Not Qualified	67108864 bit	2.7 V					.000024 Amp		70 ns
R1Q4A7236ABB-33IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit								.45 ns
R1Q4A7236ABG-40IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	680 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
HM66WP36512BP-50	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY				1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1				22 mm	3 ns
70P259L90BYI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20		SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	131072 bit	1.7 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL	e0			.006 Amp		90 ns
70V7319S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY					70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE						4.2 ns
70T3719MS133BBGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY					85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B324		2.6 V					18874368 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1					15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.