BGA SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
R1QAA3618CBG-22IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1070 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				450 MHz		Not Qualified	37748736 bit						.78 Amp		.45 ns
R1Q5A3636ABG-33R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	37748736 bit						.33 Amp		.45 ns
R1QHA7218ABG-25IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	4194304 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit								.55 ns
70V3579S6BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260			6 ns
70V3379S6BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V		e1	30	260	.015 Amp		6 ns
R1QAA3618CBB-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				500 MHz		Not Qualified	37748736 bit						.83 Amp		.45 ns
R1QDA3636CBG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	37748736 bit						.87 Amp		.45 ns
70P259L65BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	131072 bit	1.7 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL	e0			.006 Amp		65 ns
R1QDA7236ABB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.91 Amp		.45 ns
R1Q4A7218ABG-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
R1WV3216RBG-7SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	3	3/3.3	16	GRID ARRAY	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	2MX16	2M	2 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V				Not Qualified	33554432 bit	2.7 V		e1	20	260			70 ns
70V7599S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B208		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE						3.6 ns
R1QHA3618CBB-25IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	37748736 bit						.72 Amp		.55 ns
R1QAA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns
70V3379S6BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225	.015 Amp		6 ns
70V3389S5BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260	.015 Amp		5 ns
R1QGA7236ABG-25IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1060 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit						.77 Amp		.55 ns
R1QDA7236ABG-19IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.91 Amp		.45 ns
70T9159L9BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	220 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX9	16K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.5 mm	66 MHz	10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp	10 mm	9 ns
70T9159L12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	150 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.5 mm	50 MHz	10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp	10 mm	12 ns
70T9159L7BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	200 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V		83 MHz		Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp		7 ns
70T9169L12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	150 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V		50 MHz		Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp		12 ns
70T9169L7BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	200 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V		83 MHz		Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp		7 ns
70T9159L9BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.5 mm	66 MHz	10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp	10 mm	9 ns
70V7589S166BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	830 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.04 Amp		3.6 ns
70V7589S133BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.03 Amp		4.2 ns
70V7589S200BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		200 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.03 Amp		3.4 ns
70V7589S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	675 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.04 Amp		4.2 ns
70V7589S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.03 Amp		4.2 ns
70V7589S133BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	675 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.04 Amp		4.2 ns
70T9169L9BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.5 mm	66 MHz	10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp	10 mm	9 ns
70T9169L9BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	220 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY	BGA100,10X10,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX9	16K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.5 mm	66 MHz	10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240	.003 Amp	10 mm	9 ns
70V7589S166BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.03 Amp		3.6 ns
70V7519S133BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B208		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						4.2 ns
70T3599S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V		133 MHz		Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260	.015 Amp		15 ns
70V3379S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260	.015 Amp	15 mm	4.2 ns
71P79804167BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				167 MHz		Not Qualified	18874368 bit						.335 Amp		.5 ns
70V7519S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						4.2 ns
R1QBA7218ABG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	920 mA	4194304 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.78 Amp		.45 ns
R1QDA3618CBG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1070 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				450 MHz		Not Qualified	37748736 bit						.78 Amp		.45 ns
70T3319S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	4718592 bit			e0			.02 Amp		12 ns
R1QAA7218ABB-19IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				533 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns
70V3399S166BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp		3.6 ns
70V3379S4BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	589824 bit	3.15 V		e1	30	260	.015 Amp		4.2 ns
71P71204S167BQ	Renesas Electronics	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	475 mA	2097152 words	COMMON		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm		3-STATE	2MX8	2M	1.7 V		TIN LEAD	BOTTOM		R-PBGA-B165	3			167 MHz		Not Qualified	16777216 bit			e0	30	225	.275 Amp		.5 ns
71P79104S250BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX9	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	18874368 bit			e0	30	225	.375 Amp		.45 ns
R1Q2A7209ABG-40IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	8MX9	8M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit								.45 ns
R1QDA7218ABG-19IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit						.87 Amp		.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.