BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V3569S6BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e0	20	225		.015 Amp		6 ns
70V3589S133BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225		.03 Amp		4.2 ns
70V3379S5BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		100 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.015 Amp		5 ns
R1Q5A3609ABG-33R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	COMMON		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	37748736 bit							.33 Amp		.45 ns
703517S250RM	Renesas Electronics	QDR SRAM	COMMERCIAL	576	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.8		36	GRID ARRAY			1 mm	70 Cel		256KX36	256K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B576		1.9 V	2.55 mm		25 mm	Not Qualified	9437184 bit	1.7 V		e3					25 mm	.45 ns
R1Q3A7218ABG-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	730 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit									.45 ns
70V7599S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		BOTTOM	2	X-PBGA-B208		3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V						.04 Amp		4.2 ns
70V3579S5BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260				5 ns
70V7319S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel		BOTTOM		S-PBGA-B208		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							4.2 ns
HM67S3632BP-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		32KX36	32K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	1179648 bit	3.2 V		e0					22 mm	3.5 ns
71P79804267BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				267 MHz		Not Qualified	18874368 bit							.42 Amp		.45 ns
70V3399S166BFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B208	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp		4 ns
R1QBA3618CBB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				500 MHz		Not Qualified	37748736 bit							.84 Amp		.45 ns
R1Q4A3636ABG-33R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	37748736 bit							.33 Amp		.45 ns
R1QAA7218ABG-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.83 Amp		.45 ns
70V3399S166BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp		3.6 ns
70P247L55BYI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4096 words	COMMON	1.8	1.8	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX16	4K	1.7 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100	3	1.9 V				Not Qualified	65536 bit	1.7 V		e0	30	225		.000008 Amp		55 ns
70V7519S133BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B208		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE							4.2 ns
70V3319S133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1				.03 Amp		4.2 ns
R1QKA7236ABB-25IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1060 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit							.77 Amp		.55 ns
70V3379S5BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		100 MHz		Not Qualified	589824 bit	3.15 V		e1	30	260		.015 Amp		5 ns
70V3389S5BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp		5 ns
R1WV3216RBG-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	3	3/3.3	16	GRID ARRAY	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V				Not Qualified	33554432 bit	2.7 V		e1	20	260				70 ns
R1QAA3618CBG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1070 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				450 MHz		Not Qualified	37748736 bit							.78 Amp		.45 ns
70V3399S133BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp		4.2 ns
R1Q2A7236ABB-40IB0	Renesas Electronics	QDR II SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V					NO		15 mm	.45 ns
70V3389S6BCI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3			83 MHz		Not Qualified	1179648 bit			e0	20	225		.03 Amp		6 ns
70V3389S4BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	1179648 bit			e0				.015 Amp		4.2 ns
R1QAA3636CBG-22IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1130 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	37748736 bit							.81 Amp		.45 ns
R1QBA7218ABG-22IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	920 mA	4194304 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.78 Amp		.45 ns
70P255L65BYGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B100	3	1.9 V				Not Qualified	131072 bit	1.7 V	IT CAN OPERATE ALSO 2.5 TO 3 VOLT	e1	30	260		.000008 Amp		65 ns
71P73204S300BQ8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX8	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	16777216 bit			e0						.45 ns
70V3589S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp		4.2 ns
HM67S18258BP-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1					22 mm	6 ns
70T3599S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.02 Amp	15 mm	15 ns
R1QAA3636CBG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				500 MHz		Not Qualified	37748736 bit							.87 Amp		.45 ns
R1QEA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1030 mA	4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.87 Amp		.45 ns
R1QAA7236ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.91 Amp		.45 ns
R1QEA7236ABG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit							.86 Amp		.45 ns
70T3589S200BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		200 MHz		Not Qualified	2359296 bit	2.4 V		e1	30	260		.015 Amp		3.4 ns
70V7319S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							4.2 ns
70T633S10BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V				Not Qualified	9437184 bit	2.4 V		e1	30	260		.02 Amp		10 ns
70V3389S4BCI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	1179648 bit			e0				.015 Amp		4.2 ns
70T3589S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		166 MHz		Not Qualified	2359296 bit	2.4 V		e1	30	260		.02 Amp		3.6 ns
R1QBA7236ABG-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1060 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.92 Amp		.45 ns
R1Q6A3636ABG-60R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				167 MHz		Not Qualified	37748736 bit							.26 Amp		.45 ns
72T631S12BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		2.5		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B256	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1						12 ns
R1Q3A3609BBG-60RB0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				167 MHz		Not Qualified	37748736 bit							.33 Amp		.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.