DIE SRAM 780

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

N04M1618L1AW-150I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

UNCASED CHIP

85 Cel

256KX16

256K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

4194304 bit

1.4 V

150 ns

N02M0818L1AW-150I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

8

UNCASED CHIP

85 Cel

256KX8

256K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

2097152 bit

1.4 V

150 ns

N04Q1618C2BW-15C

Onsemi

STANDARD SRAM

COMMERCIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

UNCASED CHIP

70 Cel

256KX16

256K

0 Cel

TIN LEAD

UPPER

X-XUUC-N

1.95 V

Not Qualified

4194304 bit

1.65 V

e0

150 ns

N02M0818L1AW-85I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

8

UNCASED CHIP

85 Cel

256KX8

256K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

2097152 bit

1.7 V

85 ns

N01M0818L1AW-85I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

1.8

8

UNCASED CHIP

85 Cel

128KX8

128K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

1048576 bit

1.7 V

85 ns

N04Q1612C2BW-15C

Onsemi

STANDARD SRAM

COMMERCIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.2

16

UNCASED CHIP

70 Cel

256KX16

256K

0 Cel

TIN LEAD

UPPER

X-XUUC-N

1.3 V

Not Qualified

4194304 bit

1.1 V

e0

150 ns

N08M1618L1AD-85I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

1.8

16

UNCASED CHIP

85 Cel

512KX16

512K

-40 Cel

UPPER

X-XUUC-N

2.2 V

Not Qualified

8388608 bit

1.4 V

85 ns

N04Q1618C2BW-70C

Onsemi

STANDARD SRAM

COMMERCIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

UNCASED CHIP

70 Cel

256KX16

256K

0 Cel

TIN LEAD

UPPER

X-XUUC-N

1.95 V

Not Qualified

4194304 bit

1.65 V

e0

70 ns

N04M1618L1AW-85I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

UNCASED CHIP

85 Cel

256KX16

256K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

4194304 bit

1.4 V

85 ns

N01M0818L1AW-15I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

1.8

8

UNCASED CHIP

85 Cel

128KX8

128K

-40 Cel

UPPER

X-XUUC-N

2.3 V

Not Qualified

1048576 bit

1.4 V

150 ns

N04Q1618C2BW-85C

Onsemi

STANDARD SRAM

COMMERCIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

UNCASED CHIP

70 Cel

256KX16

256K

0 Cel

TIN LEAD

UPPER

X-XUUC-N

1.95 V

Not Qualified

4194304 bit

1.65 V

e0

85 ns

N08M1618L1AD-150I

Onsemi

STANDARD SRAM

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

1.8

16

UNCASED CHIP

85 Cel

512KX16

512K

-40 Cel

UPPER

X-XUUC-N

2.2 V

Not Qualified

8388608 bit

1.4 V

150 ns

M69KB128AA70DW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

70 ns

M69KB128AA70CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

70 ns

M69KB128AA85DW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

85 ns

M69KB128ABCW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.00001 Amp

70 ns

M69KB128ABDW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.00001 Amp

70 ns

M69KB096AB70CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00001 Amp

70 ns

M69KB096AA70CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00012 Amp

70 ns

M69KB048BD70W8T

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

2097152 words

1.8

16

UNCASED CHIP

85 Cel

2MX16

2M

-30 Cel

TIN LEAD

UPPER

X-XUUC-N

1.95 V

Not Qualified

33554432 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

e0

70 ns

M69KB096AB70DW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00001 Amp

70 ns

M69KB048BD70W8F

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

2097152 words

1.8

16

UNCASED CHIP

85 Cel

2MX16

2M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

33554432 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

40

NOT SPECIFIED

70 ns

M69AB048BD70W8F

STMicroelectronics

PSEUDO STATIC RAM

OTHER

71

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

1.8

1.8

16

UNCASED CHIP

BGA71,8X12,32

Other Memory ICs

.8 mm

85 Cel

3-STATE

2MX16

2M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

33554432 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

40

NOT SPECIFIED

.00001 Amp

70 ns

M69KB096AA85CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00012 Amp

85 ns

M69KM096AACW8

STMicroelectronics

PSEUDO STATIC RAM

COMMERCIAL EXTENDED

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

.00001 Amp

70 ns

M69KB096AA70AW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00012 Amp

70 ns

M69KB096AA85AW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

4MX16

4M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

67108864 bit

1.7 V

.00012 Amp

85 ns

M69KM048AACW8

STMicroelectronics

PSEUDO STATIC RAM

COMMERCIAL EXTENDED

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

40 mA

2097152 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

2MX16

2M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

33554432 bit

1.7 V

.00007 Amp

70 ns

M69KB128AA85CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

85 ns

M69KB128AA70AW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

70 ns

M69AB048BD70W8T

STMicroelectronics

PSEUDO STATIC RAM

OTHER

71

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

1.8

1.8

16

UNCASED CHIP

BGA71,8X12,32

Other Memory ICs

.8 mm

85 Cel

3-STATE

2MX16

2M

-30 Cel

TIN LEAD

UPPER

X-XUUC-N

1.95 V

Not Qualified

33554432 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

e0

.00001 Amp

70 ns

M69KB128AA85AW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

85 ns

CYRS1543AV18-1XWI

Infineon Technologies

QDR SRAM

MILITARY

DIE

UNSPECIFIED

300k Rad(Si)

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

UNCASED CHIP

125 Cel

4MX18

4M

-55 Cel

UPPER

X-XUUC-N

1.9 V

75497472 bit

1.7 V

BURST ARCHITECTURE

NOT SPECIFIED

NOT SPECIFIED

CY62165E-3XWI

Infineon Technologies

STANDARD SRAM

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1024 words

COMMON

16

UNCASED CHIP

DIE OR CHIP

85 Cel

1KX16

1K

-40 Cel

UNSPECIFIED

1

X-XUUC-N

5.5 V

16384 bit

1.65 V

NO

K1B5616B2M000000

Samsung

PSEUDO STATIC RAM

INDUSTRIAL

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

16777216 words

1.8

16

UNCASED CHIP

85 Cel

16MX16

16M

-40 Cel

UPPER

R-XUUC-N

2 V

Not Qualified

268435456 bit

1.7 V

70 ns

K1S64161CC-W3000

Samsung

PSEUDO STATIC RAM

INDUSTRIAL

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4194304 words

2.9

16

UNCASED CHIP

85 Cel

4MX16

4M

-40 Cel

UPPER

R-XUUC-N

3.1 V

Not Qualified

67108864 bit

2.7 V

70 ns

MT58LC32K32C4S22BWC1-7

Micron Technology

STANDARD SRAM

COMMERCIAL

105

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

32768 words

3.3

32

UNCASED CHIP

70 Cel

3-STATE

32KX32

32K

0 Cel

UPPER

1

X-XUUC-N105

3.5 V

Not Qualified

1048576 bit

3.1 V

YES

MT58LC32K32B2S25ADC3-14

Micron Technology

STANDARD SRAM

COMMERCIAL

100

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

32768 words

3.3

32

UNCASED CHIP

70 Cel

3-STATE

32KX32

32K

0 Cel

UPPER

1

X-XUUC-N100

3.465 V

Not Qualified

1048576 bit

3.135 V

AUTOMATIC POWER-DOWN

YES

MT58LC128K32B3S27BWC2-10

Micron Technology

STANDARD SRAM

COMMERCIAL

94

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

UNCASED CHIP

70 Cel

3-STATE

128KX32

128K

0 Cel

UPPER

1

X-XUUC-N94

3.6 V

Not Qualified

4194304 bit

3.135 V

YES

10 ns

MT58LC256K18B3S27BDC7-8.5

Micron Technology

STANDARD SRAM

COMMERCIAL

79

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

UNCASED CHIP

70 Cel

3-STATE

256KX18

256K

0 Cel

UPPER

1

R-XUUC-N79

3.6 V

Not Qualified

4718592 bit

3.135 V

YES

8.5 ns

MT58LC256K16E1S27BWC2-10

Micron Technology

STANDARD SRAM

COMMERCIAL

77

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

262144 words

3.3

16

UNCASED CHIP

70 Cel

3-STATE

256KX16

256K

0 Cel

UPPER

1

X-XUUC-N77

3.6 V

Not Qualified

4194304 bit

3.135 V

YES

10 ns

MT58LC32K36C4S22BWC1-7

Micron Technology

STANDARD SRAM

COMMERCIAL

105

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

UNCASED CHIP

70 Cel

3-STATE

32KX36

32K

0 Cel

UPPER

1

X-XUUC-N105

3.5 V

Not Qualified

1179648 bit

3.1 V

YES

7 ns

MT58LC128K18E1S27BWC2-9

Micron Technology

STANDARD SRAM

COMMERCIAL

78

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

131072 words

3.3

18

UNCASED CHIP

70 Cel

3-STATE

128KX18

128K

0 Cel

UPPER

1

X-XUUC-N78

3.6 V

Not Qualified

2359296 bit

3.135 V

YES

MT58LC32K36B2S22BWC2-9

Micron Technology

STANDARD SRAM

COMMERCIAL

105

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

UNCASED CHIP

70 Cel

3-STATE

32KX36

32K

0 Cel

UPPER

1

X-XUUC-N105

3.5 V

Not Qualified

1179648 bit

3.1 V

YES

9 ns

MT58LC32K32C4S25AWC1-7

Micron Technology

STANDARD SRAM

COMMERCIAL

100

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

32768 words

3.3

32

UNCASED CHIP

70 Cel

3-STATE

32KX32

32K

0 Cel

UPPER

1

X-XUUC-N100

3.465 V

Not Qualified

1048576 bit

3.135 V

AUTOMATIC POWER-DOWN

YES

MT58LC64K16E1S27BDC1

Micron Technology

STANDARD SRAM

COMMERCIAL

75

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

65536 words

3.3

16

UNCASED CHIP

70 Cel

3-STATE

64KX16

64K

0 Cel

UPPER

1

R-XUUC-N75

3.6 V

Not Qualified

1048576 bit

3.135 V

YES

MT58LC64K18C4S25ADC2-6

Micron Technology

STANDARD SRAM

COMMERCIAL

100

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

UNCASED CHIP

70 Cel

3-STATE

64KX18

64K

0 Cel

UPPER

1

X-XUUC-N100

3.465 V

Not Qualified

1179648 bit

3.135 V

AUTOMATIC POWER-DOWN

YES

6 ns

MT58LC64K16E1S27BDC7-10

Micron Technology

STANDARD SRAM

COMMERCIAL

75

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

65536 words

3.3

16

UNCASED CHIP

70 Cel

3-STATE

64KX16

64K

0 Cel

UPPER

1

R-XUUC-N75

3.6 V

Not Qualified

1048576 bit

3.135 V

YES

10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.