Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
256KX16 |
256K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
4194304 bit |
1.4 V |
150 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
8 |
UNCASED CHIP |
85 Cel |
256KX8 |
256K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
2097152 bit |
1.4 V |
150 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
UNCASED CHIP |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
4194304 bit |
1.65 V |
e0 |
150 ns |
|||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
8 |
UNCASED CHIP |
85 Cel |
256KX8 |
256K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
2097152 bit |
1.7 V |
85 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
131072 words |
1.8 |
8 |
UNCASED CHIP |
85 Cel |
128KX8 |
128K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
1048576 bit |
1.7 V |
85 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.2 |
16 |
UNCASED CHIP |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.3 V |
Not Qualified |
4194304 bit |
1.1 V |
e0 |
150 ns |
|||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
512KX16 |
512K |
-40 Cel |
UPPER |
X-XUUC-N |
2.2 V |
Not Qualified |
8388608 bit |
1.4 V |
85 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
UNCASED CHIP |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
4194304 bit |
1.65 V |
e0 |
70 ns |
|||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
256KX16 |
256K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
4194304 bit |
1.4 V |
85 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
131072 words |
1.8 |
8 |
UNCASED CHIP |
85 Cel |
128KX8 |
128K |
-40 Cel |
UPPER |
X-XUUC-N |
2.3 V |
Not Qualified |
1048576 bit |
1.4 V |
150 ns |
|||||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
UNCASED CHIP |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
4194304 bit |
1.65 V |
e0 |
85 ns |
|||||||||||||||||||||||||||||
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
512KX16 |
512K |
-40 Cel |
UPPER |
X-XUUC-N |
2.2 V |
Not Qualified |
8388608 bit |
1.4 V |
150 ns |
|||||||||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
85 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.00001 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.00001 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00001 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00012 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
2MX16 |
2M |
-30 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE ALSO POSSIBLE |
e0 |
70 ns |
||||||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00001 Amp |
70 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
2MX16 |
2M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE ALSO POSSIBLE |
40 |
NOT SPECIFIED |
70 ns |
|||||||||||||||||||||||||||
|
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
71 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
BGA71,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE ALSO POSSIBLE |
40 |
NOT SPECIFIED |
.00001 Amp |
70 ns |
||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00012 Amp |
85 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
SYNCHRONOUS BURST MODE ALSO POSSIBLE |
.00001 Amp |
70 ns |
|||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00012 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
4194304 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
4MX16 |
4M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
67108864 bit |
1.7 V |
.00012 Amp |
85 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
40 mA |
2097152 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
2MX16 |
2M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
33554432 bit |
1.7 V |
.00007 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
85 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
70 ns |
||||||||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
71 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
BGA71,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
-30 Cel |
TIN LEAD |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE ALSO POSSIBLE |
e0 |
.00001 Amp |
70 ns |
|||||||||||||||||||
STMicroelectronics |
PSEUDO STATIC RAM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
35 mA |
8388608 words |
COMMON |
1.8 |
1.8 |
16 |
UNCASED CHIP |
WAFER |
Other Memory ICs |
85 Cel |
3-STATE |
8MX16 |
8M |
-30 Cel |
UPPER |
X-XUUC-N |
1.95 V |
Not Qualified |
134217728 bit |
1.7 V |
.0002 Amp |
85 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
QDR SRAM |
MILITARY |
DIE |
UNSPECIFIED |
300k Rad(Si) |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
UNCASED CHIP |
125 Cel |
4MX18 |
4M |
-55 Cel |
UPPER |
X-XUUC-N |
1.9 V |
75497472 bit |
1.7 V |
BURST ARCHITECTURE |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1024 words |
COMMON |
16 |
UNCASED CHIP |
DIE OR CHIP |
85 Cel |
1KX16 |
1K |
-40 Cel |
UNSPECIFIED |
1 |
X-XUUC-N |
5.5 V |
16384 bit |
1.65 V |
NO |
|||||||||||||||||||||||||||||||
Samsung |
PSEUDO STATIC RAM |
INDUSTRIAL |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
16777216 words |
1.8 |
16 |
UNCASED CHIP |
85 Cel |
16MX16 |
16M |
-40 Cel |
UPPER |
R-XUUC-N |
2 V |
Not Qualified |
268435456 bit |
1.7 V |
70 ns |
|||||||||||||||||||||||||||||||
Samsung |
PSEUDO STATIC RAM |
INDUSTRIAL |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
2.9 |
16 |
UNCASED CHIP |
85 Cel |
4MX16 |
4M |
-40 Cel |
UPPER |
R-XUUC-N |
3.1 V |
Not Qualified |
67108864 bit |
2.7 V |
70 ns |
|||||||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
105 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
32 |
UNCASED CHIP |
70 Cel |
3-STATE |
32KX32 |
32K |
0 Cel |
UPPER |
1 |
X-XUUC-N105 |
3.5 V |
Not Qualified |
1048576 bit |
3.1 V |
YES |
||||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
32 |
UNCASED CHIP |
70 Cel |
3-STATE |
32KX32 |
32K |
0 Cel |
UPPER |
1 |
X-XUUC-N100 |
3.465 V |
Not Qualified |
1048576 bit |
3.135 V |
AUTOMATIC POWER-DOWN |
YES |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
94 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
32 |
UNCASED CHIP |
70 Cel |
3-STATE |
128KX32 |
128K |
0 Cel |
UPPER |
1 |
X-XUUC-N94 |
3.6 V |
Not Qualified |
4194304 bit |
3.135 V |
YES |
10 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
79 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
UNCASED CHIP |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
UPPER |
1 |
R-XUUC-N79 |
3.6 V |
Not Qualified |
4718592 bit |
3.135 V |
YES |
8.5 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
77 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
16 |
UNCASED CHIP |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
UPPER |
1 |
X-XUUC-N77 |
3.6 V |
Not Qualified |
4194304 bit |
3.135 V |
YES |
10 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
105 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
UNCASED CHIP |
70 Cel |
3-STATE |
32KX36 |
32K |
0 Cel |
UPPER |
1 |
X-XUUC-N105 |
3.5 V |
Not Qualified |
1179648 bit |
3.1 V |
YES |
7 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
78 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
18 |
UNCASED CHIP |
70 Cel |
3-STATE |
128KX18 |
128K |
0 Cel |
UPPER |
1 |
X-XUUC-N78 |
3.6 V |
Not Qualified |
2359296 bit |
3.135 V |
YES |
||||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
105 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
UNCASED CHIP |
70 Cel |
3-STATE |
32KX36 |
32K |
0 Cel |
UPPER |
1 |
X-XUUC-N105 |
3.5 V |
Not Qualified |
1179648 bit |
3.1 V |
YES |
9 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
32 |
UNCASED CHIP |
70 Cel |
3-STATE |
32KX32 |
32K |
0 Cel |
UPPER |
1 |
X-XUUC-N100 |
3.465 V |
Not Qualified |
1048576 bit |
3.135 V |
AUTOMATIC POWER-DOWN |
YES |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
75 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
16 |
UNCASED CHIP |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
UPPER |
1 |
R-XUUC-N75 |
3.6 V |
Not Qualified |
1048576 bit |
3.135 V |
YES |
||||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
UNCASED CHIP |
70 Cel |
3-STATE |
64KX18 |
64K |
0 Cel |
UPPER |
1 |
X-XUUC-N100 |
3.465 V |
Not Qualified |
1179648 bit |
3.135 V |
AUTOMATIC POWER-DOWN |
YES |
6 ns |
||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
75 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
16 |
UNCASED CHIP |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
UPPER |
1 |
R-XUUC-N75 |
3.6 V |
Not Qualified |
1048576 bit |
3.135 V |
YES |
10 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.