DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1250W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32	3.6 V			Not Qualified	4194304 bit	3 V		e3			.00025 Amp		100 ns
DS1249AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1270Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE				85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL	R-PDIP-T36	5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1225AD-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-P28	5.5 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3			.01 Amp	38.227 mm	70 ns
DS1225AB-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-P28	5.25 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3			.01 Amp	38.227 mm	70 ns
DS1249YP-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1249Y-85IND#	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T32	5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	DATA RETENTION > 10 YEARS	e3				53.085 mm	85 ns
DS1230-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0			.00015 Amp		150 ns
DS1230AB-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDIP-P28	5.25 V	9.4 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0006 Amp	38.227 mm	70 ns
DS1230Y-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.5 V			Not Qualified	262144 bit	4.5 V		e3			.0006 Amp		85 ns
DS1225AD-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDMA-P28	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3			.01 Amp	38.865 mm	150 ns
DS1265Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	IN-LINE				70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL	R-PDIP-T36	5.5 V			Not Qualified	8388608 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1250Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32	5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1230AB-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3			.0006 Amp		120 ns
DS1265Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P36	5.5 V			Not Qualified	8388608 bit	4.5 V		e3			.0002 Amp		70 ns
DS1245W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
DS1225AB-170-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.005 Amp		170 ns
DS1220AD-150-IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL	R-XDIP-T24	5.5 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		33.785 mm	150 ns
DS1230AB-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3			.0006 Amp		120 ns
LC3564ASLL-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit						.000015 Amp		100 ns
LC3517B-10	Onsemi	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel		DUAL	R-PDIP-T24				Not Qualified	16384 bit						.00002 Amp		100 ns
LC3564ALL-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit						.000015 Amp		100 ns
LC3564ALL-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit						.000015 Amp		120 ns
LC3564ASLL-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit						.000015 Amp		120 ns
MC10H145L	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	DUAL	R-CDIP-T16		5.08 mm	7.62 mm	Not Qualified	64 bit			e0				19.49 mm	6 ns
MC10H145P	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	DUAL	R-PDIP-T16		4.44 mm	7.62 mm	Not Qualified	64 bit			e0		235		19.175 mm	6 ns
LC3517BL-10	Onsemi	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel		DUAL	R-PDIP-T24				Not Qualified	16384 bit						.000001 Amp		100 ns
CAT22C10LI-20T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel		DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V						22.73 mm	200 ns
CAT24C44LI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL	R-PDIP-T8	5.5 V	5.33 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3		260	.00003 Amp	9.27 mm	375 ns
CAT22C10L-20	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3				21.97 mm	200 ns
CAT24C44GL	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	70 Cel		16X16	16		0 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e4				9.59 mm	375 ns
CAT24C44LA	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	105 Cel		16X16	16		-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3				9.59 mm	375 ns
CAT22C10PI-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0				21.97 mm	300 ns
CAT24C44GLI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	85 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T8	5.5 V	5.33 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e4				9.27 mm	375 ns
CAT24C44L	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	IN-LINE	DIP8,.3	SRAMs	2.54 mm	70 Cel		16X16	16		0 Cel	TIN	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3			.00003 Amp	9.59 mm	375 ns
CAT24C44LE-G	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	IN-LINE	DIP8,.3	SRAMs	2.54 mm	125 Cel		16X16	16		-40 Cel		DUAL	R-PDIP-T8	5.5 V	5.33 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e4	NOT SPECIFIED	NOT SPECIFIED	.00003 Amp	9.27 mm	375 ns
CAT24C44GLE	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	125 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T8	5.5 V	5.33 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e4				9.27 mm	375 ns
CAT22C10LA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3	40	260		21.97 mm	200 ns
CAT24C44LA-G	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	105 Cel		16X16	16		-40 Cel		DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		9.59 mm	375 ns
CAT22C10LE-30T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	125 Cel		64X4	64		-40 Cel		DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V						22.73 mm	300 ns
CAT24C44L-G	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	70 Cel		16X16	16		0 Cel		DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		9.59 mm	375 ns
CAT24C44PI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	85 Cel		16X16	16		-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	10 YEAR DATA RETENTION ;EEPROM HARDWARE/SOFTWARE RECALL/STORE	e0				9.59 mm	375 ns
CAT22C10PA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e0				21.97 mm	200 ns
CAT22C10PA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e0				21.97 mm	300 ns
CAT22C10P-20	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0				21.97 mm	200 ns
CAT24C44GLA	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	105 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e4				9.59 mm	375 ns
CAT22C10P-30	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL	R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0				21.97 mm	300 ns
CAT24C44PE	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	125 Cel		16X16	16		-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e0				9.59 mm	375 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.