DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CAT24C44LE	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	IN-LINE	DIP8,.3	SRAMs	2.54 mm	125 Cel		16X16	16		-40 Cel		DUAL		R-PDIP-T8	5.5 V	5.33 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3	NOT SPECIFIED	NOT SPECIFIED		.00003 Amp	9.27 mm	375 ns
CAT24C44PA	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	105 Cel		16X16	16		-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	10 YEAR DATA RETENTION; LOW POWER STANDBY MODE	e0					9.59 mm	375 ns
CAT22C10LA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3	40	260			21.97 mm	300 ns
CAT24C44P	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16 words		5		16	IN-LINE			2.54 mm	70 Cel		16X16	16		0 Cel	TIN LEAD	DUAL		R-PDIP-T8	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	10 YEAR DATA RETENTION ;EEPROM HARDWARE/SOFTWARE RECALL/STORE	e0					9.59 mm	375 ns
CAT22C10LI-30T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	300 ns
CAT22C10LE-20T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	125 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	200 ns
CAT22C10L-30	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL		R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3					21.97 mm	300 ns
CAT22C10PI-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDIP-T18	5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					21.97 mm	200 ns
IMS1620P-70L	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.00025 Amp		70 ns
MK48Z09B10	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp		100 ns
IMS1605S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.002 Amp	27.94 mm	15 ns
MK48Z12B20	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	9.562 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp		200 ns
MK48H64N-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0005 Amp	36.83 mm	120 ns
IMS1420S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0						40 ns
MK48S80N17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.25 V	4.57 mm	7.62 mm	Not Qualified	65536 bit	4.75 V	TOTEM-POLE MATCH OUTPUT	e0			YES	.16 Amp	34.67 mm	20 ns
MK48256LN-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0				.00002 Amp		120 ns
IMS1620AS-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns
5962-8601503XA	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22	5.5 V	3.89 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.94 mm	45 ns
IMS1203S-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	35 ns
IMS1626S-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V					YES			20 ns
MK41H67P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0						35 ns
MK48Z13B25	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit							.001 Amp		250 ns
5962-8685915LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel		DUAL		R-XDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V							30.48 mm	45 ns
M68AF127BM55B6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42.035 mm	55 ns
M54HC670F1	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T16	6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V		e0			NO			59 ns
MK48Z09B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			YES	.003 Amp		150 ns
IMS1600P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns
MK48127N-70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V					YES		41.91 mm	70 ns
IMS1630LP-12	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.572 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp	36.83 mm	120 ns
5962-8552505XC	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel	3-STATE	8KX8	8K		-55 Cel	GOLD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e4			YES		35.56 mm	55 ns
M68AF031AL55B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	55 ns
MK48128N-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V					YES		41.91 mm	55 ns
MK41H67N-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		26.289 mm	25 ns
M68AF127BM70B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.0000045 Amp	42.035 mm	70 ns
MK48Z13B12	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit							.001 Amp		120 ns
MK48Z18B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp		150 ns
MK48Z18B10	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp		100 ns
IMS1400S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	40 ns
IMS1624P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.014 Amp	29.46 mm	45 ns
5962-8552504XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V							35.56 mm	70 ns
IMS1223S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	22.86 mm	25 ns
IMS1800S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	30.48 mm	25 ns
IMS1625P-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.00007 Amp		20 ns
IMS1627S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V					YES			35 ns
M68AF031AL70B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	70 ns
IMS1620AP-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		25 ns
IMS1630S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0				.014 Amp		55 ns
IMS1800S-30M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V					NO		30.48 mm	30 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.