FQFP SRAM 197

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
70V659S12DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V		e3		260	.015 Amp	28 mm	12 ns
70V659S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V		e3	30	260	.015 Amp	28 mm	12 ns
70V3589S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3		260	.04 Amp	28 mm	15 ns
IDT70V659S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V		e3			.015 Amp	28 mm	12 ns
70V3569S4DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	460 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3			.015 Amp	28 mm	4.2 ns
70V3579S4DRG8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel		QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE					28 mm	4.2 ns
70V3589S166DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	166 MHz	28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3		260	.03 Amp	28 mm	12 ns
70V657S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	1179648 bit	3.15 V		e3	NOT SPECIFIED	260	.015 Amp	28 mm	12 ns
IDT70V657S12DR	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	465 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	1179648 bit	3.15 V		e0			.015 Amp	28 mm	12 ns
IDT70V657S12DRI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	1179648 bit	3.15 V		e0			.015 Amp	28 mm	12 ns
5962-9674502QXC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240		5.25 V	4.3 mm		32 mm	Not Qualified	4194304 bit	4.75 V		e4				32 mm
5962-9674502QXX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240		5.25 V	4.3 mm		32 mm	Not Qualified	4194304 bit	4.75 V						32 mm
5962-9674502QYX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240		5.25 V	4.2 mm		32 mm	Not Qualified	4194304 bit	4.75 V						32 mm
5962-9674502QYC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240		5.25 V	4.2 mm		32 mm	Not Qualified	4194304 bit	4.75 V		e4				32 mm
70V7599S200DR	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0				28 mm	10 ns
70V3579S5DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	100 MHz	28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				28 mm	5 ns
70T651S12DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	9437184 bit	2.4 V		e3			.01 Amp	28 mm	12 ns
70T651S15DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	9437184 bit	2.4 V		e3			.01 Amp	28 mm	15 ns
70V3569S5DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	360 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	100 MHz	28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3			.015 Amp	28 mm	5 ns
70V3579S5DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel		QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE					28 mm	5 ns
70T659S12DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	355 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	4718592 bit	2.4 V		e3			.01 Amp	28 mm	12 ns
70T3519S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208		2.6 V	4.1 mm		28 mm		9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				28 mm	15 ns
70V3589S166DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	166 MHz	28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3	NOT SPECIFIED	260	.03 Amp	28 mm	12 ns
70V3599S133DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.03 Amp	28 mm	15 ns
70V3579S6DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	83 MHz	28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				28 mm	6 ns
70V3569S5DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		16KX36	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				28 mm	5 ns
70V3579S5DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		32KX36	32K		-40 Cel		QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE					28 mm	5 ns
70T659S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	395 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	4718592 bit	2.4 V		e3			.02 Amp	28 mm	12 ns
70V3599S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3	NOT SPECIFIED	260	.04 Amp	28 mm	15 ns
70T3519S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	166 MHz	28 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	3.6 ns
70T3599S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	133 MHz	28 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	15 ns
70T3519S166DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		256KX36	256K		0 Cel	MATTE TIN	QUAD		S-PQFP-G208		2.6 V	4.1 mm		28 mm		9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				28 mm	12 ns
70V3589S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3	NOT SPECIFIED	260	.04 Amp	28 mm	15 ns
70V3579S4DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3	NOT SPECIFIED	260		28 mm	4.2 ns
70T651S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	9437184 bit	2.4 V		e3			.02 Amp	28 mm	12 ns
70T3599S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	166 MHz	28 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	3.6 ns
70T3599S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		128KX36	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208		2.6 V	4.1 mm		28 mm		4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				28 mm	15 ns
70V3579S5DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	100 MHz	28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				28 mm	5 ns
70T3589S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	133 MHz	28 mm	Not Qualified	2359296 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	15 ns
70T3589S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	166 MHz	28 mm	Not Qualified	2359296 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	3.6 ns
70T3589S166DRI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	166 MHz	28 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0			.02 Amp	28 mm	12 ns
70T3599S133DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel	MATTE TIN	QUAD		S-PQFP-G208		2.6 V	4.1 mm		28 mm		4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				28 mm	15 ns
70T3519S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	133 MHz	28 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.02 Amp	28 mm	15 ns
70V3569S6DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	83 MHz	28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3			.015 Amp	28 mm	6 ns
70T3599S133DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm	133 MHz	28 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.015 Amp	28 mm	15 ns
70T659S15DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	2.6 V	4.1 mm		28 mm	Not Qualified	4718592 bit	2.4 V		e3			.01 Amp	28 mm	15 ns
70V3569S6DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		16KX36	16K		0 Cel	MATTE TIN	QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				28 mm	6 ns
70V3569S6DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		16KX36	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e3				28 mm	6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.