FQFP SRAM 197

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length	Maximum Access Time
IDT70V3569S4DR8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		16KX36	16K		0 Cel	TIN LEAD	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e0	28 mm	4.2 ns
70V658S15DR8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		64KX36	64K		0 Cel	TIN LEAD	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	2359296 bit	3.15 V		e0	28 mm	15 ns
IDT70V3589S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		64KX36	64K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3	28 mm	12 ns
IDT70V3579S5DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	100 MHz	28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e3	28 mm	5 ns
IDT70V3579S4DR8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel	TIN LEAD	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e0	28 mm	4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.