HBGA SRAM 63

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
K7D321874A-HC50	Samsung	DDR SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	2097152 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.6 V	2.75 mm	500 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.3 Amp	22 mm	2.5 ns
K7D161871B-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.63 V	2.21 mm	375 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0	.1 Amp	22 mm	1.7 ns
K7P803611M-H20	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.06 Amp	22 mm	2.5 ns
K7D161888B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	1.9 V	2.21 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.1 Amp	22 mm	2.1 ns
K7P403623B-H65	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.12 Amp	22 mm	6.5 ns
K7D161888B-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	1.9 V	2.21 mm	370 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.1 Amp	22 mm	1.7 ns
K7P803611M-H21	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.06 Amp	22 mm	2 ns
K7P801811M-H25	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	524288 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.06 Amp	22 mm	2 ns
K7P801811M-H20	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.06 Amp	22 mm	2.5 ns
K7D323674A-HC50	Samsung	DDR SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	1048576 words	COMMON	2.5	1.5,1.8	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.6 V	2.75 mm	500 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.3 Amp	22 mm	2.5 ns
K7D163671B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.63 V	2.21 mm	333 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0		22 mm	1.7 ns
K7P401823B-H65	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	290 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0	.12 Amp	22 mm	6.5 ns
K7P801822B-HC20	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	TIN LEAD	BOTTOM	R-PBGA-B153		3.45 V	2.2 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0	.12 Amp	22 mm	2.5 ns
K7D161871B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.63 V	2.21 mm	333 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0	.1 Amp	22 mm	1.7 ns
K7D161888B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B153	3	1.9 V	2.21 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.1 Amp	22 mm	1.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.