HBGA SRAM 63

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1062G30-10BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY, HEAT SINK/SLUG			1.27 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260			22 mm	10 ns
CY7C4142KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4041KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4121KV13-633FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		8MX18	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4142KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4042KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4121KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
ICY7C1373D-100BGI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.63 V	2.4 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THRU ARCHITECTURE	e0				.07 Amp	22 mm	8.5 ns
ICY7C1373D-100BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.63 V	2.4 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THRU ARCHITECTURE	e1	20	260		.07 Amp	22 mm	8.5 ns
CY7C4021KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C4022KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C4121KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4022KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX18	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4141KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4141KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C4122KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		8MX18	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C1354C-225BGXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	20	260		.04 Amp	22 mm	2.8 ns
CY7C1356C-225BGXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	20	260		.04 Amp	22 mm	2.8 ns
CY7C1354C-225BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	20	260		.04 Amp	22 mm	2.8 ns
CY62162G30-45BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	36 mA	524288 words	COMMON	3		32	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	512KX32	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260	YES	.000016 Amp	22 mm	45 ns
CY7C1356C-225BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	20	260		.04 Amp	22 mm	2.8 ns
CY62162G18-45BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		32	GRID ARRAY, HEAT SINK/SLUG			1.27 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B119		2.2 V	2.4 mm		14 mm		16777216 bit	1.65 V							22 mm	45 ns
CY7C4142KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4021KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C1062GE30-10BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY, HEAT SINK/SLUG			1.27 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260			22 mm	10 ns
CY7C4042KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4022KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4041KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4141KV13-633FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY62162G18-55BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32 mA	524288 words	COMMON	1.8		32	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	512KX32	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B119	3	2.2 V	2.4 mm		14 mm		16777216 bit	1.65 V		e1		260	YES	.000026 Amp	22 mm	55 ns
K7P801822B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0				.12 Amp	22 mm	2.3 ns
K7P803622B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0				.12 Amp	22 mm	2.3 ns
K7P801822B-HC16	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	166.66 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0				.12 Amp	22 mm	3 ns
K7D163671B-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153	3	2.63 V	2.21 mm	375 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0					22 mm	1.7 ns
K7P403623B-H70	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	290 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.12 Amp	22 mm	7 ns
K7D161871B-HC30	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153	3	2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0				.1 Amp	22 mm	1.9 ns
K7D323674A-HC45	Samsung	DDR SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1050 mA	1048576 words	COMMON	2.5	1.5,1.8	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153	3	2.6 V	2.75 mm	455 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.3 Amp	22 mm	2.5 ns
K7P803622B-HC20	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0				.12 Amp	22 mm	2.5 ns
K7P803622B-HC16	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0				.12 Amp	22 mm	3 ns
K7D321874A-HC45	Samsung	DDR SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		2.6 V	2.75 mm	455 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.3 Amp	22 mm	2.5 ns
K7P803611M-H25	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.06 Amp	22 mm	2 ns
K7P801811M-H21	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.06 Amp	22 mm	2 ns
K7D161888B-HC30	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153	3	1.9 V	2.21 mm	300 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.1 Amp	22 mm	1.9 ns
K7P401823B-H70	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.12 Amp	22 mm	7 ns
K7P403623B-H75	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.12 Amp	22 mm	7.5 ns
K7D163671B-HC30	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153	3	2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0					22 mm	1.9 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.