Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
235 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
18 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
90 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECHTURE |
e3 |
30 |
260 |
.045 Amp |
20 mm |
8.5 ns |
|||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
95 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
8 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
330 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.035 Amp |
20 mm |
3.5 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
183 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.035 Amp |
20 mm |
3.3 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.03 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
265 mA |
131072 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
NO |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
117 MHz |
14 mm |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
260 |
YES |
.035 Amp |
20 mm |
7.5 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
190 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
NO |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
87 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
30 |
260 |
YES |
.035 Amp |
20 mm |
8.5 ns |
|||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
320 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
BURST COUNTER |
e3 |
30 |
260 |
.06 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
345 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
5 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
345 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e3 |
30 |
260 |
.06 Amp |
20 mm |
3.8 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
340 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.05 Amp |
20 mm |
3.5 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
260 |
20 mm |
3.5 ns |
|||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
NOT SPECIFIED |
260 |
20 mm |
8.5 ns |
||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.05 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
285 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
117 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
7.5 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
210 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
87 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
8.5 ns |
||||||||||
|
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
4 ns |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
163 mA |
524288 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.135 V |
-40 Cel |
PURE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
167 MHz |
14 mm |
18874368 bit |
3.135 V |
PIPE LINED ARCHITECTURE |
260 |
YES |
.08 Amp |
20 mm |
3.4 ns |
|||||||||||||
|
Gsi Technology |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
PURE MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
260 |
.02 Amp |
20 mm |
8.5 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
100 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
35 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
55 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.01 Amp |
14 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
100 ns |
||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
215 mA |
524288 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
2.38 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
215 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
4.2 ns |
|||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
255 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
5 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
4.2 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
4.2 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.045 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.03 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.045 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
270 mA |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
5 ns |
||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
345 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.8 ns |
||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
320 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
345 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e3 |
30 |
260 |
.06 Amp |
20 mm |
3.8 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.