Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
CONTENT ADDRESSABLE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
64 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
16KX64 |
16K |
-40 Cel |
QUAD |
R-PQFP-G100 |
3.5 V |
1.6 mm |
14 mm |
1048576 bit |
3.1 V |
20 mm |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CONTENT ADDRESSABLE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
16 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
QUAD |
R-PQFP-G100 |
3.5 V |
1.6 mm |
14 mm |
1048576 bit |
3.1 V |
20 mm |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
330 mA |
262144 words |
COMMON |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
70 Cel |
256KX18 |
256K |
3.125 V |
0 Cel |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
90 MHz |
14 mm |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
YES |
.005 Amp |
20 mm |
8.5 ns |
|||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
e0 |
YES |
20 mm |
8 ns |
||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
4 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
4 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
20 mm |
2.6 ns |
|||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX32 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
4194304 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
4.2 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
20 mm |
8.5 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
32KX36 |
32K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
7 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
20 mm |
10 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
7.5 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
32KX36 |
32K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
4 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
20 mm |
10 ns |
|||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
20 mm |
7 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
.01 Amp |
20 mm |
7 ns |
|||||||||||||||||
NXP Semiconductors |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
OTHER |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
110 Cel |
3-STATE |
64KX18 |
64K |
20 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
e0 |
YES |
20 mm |
8.5 ns |
|||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
20 mm |
15 ns |
|||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
370 mA |
131072 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
70 Cel |
128KX36 |
128K |
3.125 V |
0 Cel |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
75 MHz |
14 mm |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
YES |
.005 Amp |
20 mm |
9 ns |
|||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
e0 |
YES |
20 mm |
11 ns |
||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
5 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CONTENT ADDRESSABLE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
64 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
4KX64 |
4K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.5 V |
1.6 mm |
14 mm |
262144 bit |
3.1 V |
20 mm |
9 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
e0 |
YES |
20 mm |
11 ns |
||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
20 mm |
10 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CONTENT ADDRESSABLE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
64 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
4KX64 |
4K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.5 V |
1.6 mm |
16 mm |
262144 bit |
3.1 V |
20 mm |
210 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
20 mm |
9 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
4 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
FLOW-THROUGH |
20 mm |
8.5 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
e0 |
20 mm |
8 ns |
||||||||||||||||||||||||
NXP Semiconductors |
CACHE TAG SRAM |
OTHER |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
110 Cel |
64KX18 |
64K |
20 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
5 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
.01 Amp |
20 mm |
8 ns |
|||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
20 mm |
11 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
.01 Amp |
20 mm |
11 ns |
|||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
32KX36 |
32K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
4.5 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
OTHER |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
32768 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
110 Cel |
3-STATE |
32KX36 |
32K |
3.14 V |
20 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL |
e0 |
YES |
.045 Amp |
20 mm |
12 ns |
|||||||||||||
NXP Semiconductors |
CACHE SRAM |
OTHER |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
32768 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
110 Cel |
3-STATE |
32KX36 |
32K |
3.14 V |
20 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL |
e0 |
YES |
.045 Amp |
20 mm |
12 ns |
|||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
.01 Amp |
20 mm |
11 ns |
|||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
3.5 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
6 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
20 mm |
15 ns |
|||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
.01 Amp |
20 mm |
7 ns |
|||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
5 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
4718592 bit |
3.135 V |
20 mm |
4 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE TAG SRAM |
OTHER |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
110 Cel |
64KX18 |
64K |
20 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
5 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.3 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
2.7 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHTECTURE |
.01 Amp |
20 mm |
15 ns |
|||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
128KX32 |
128K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
4194304 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
4.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.