LQFP SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

SCM69C433TQ15

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

16384 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

16KX64

16K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

1048576 bit

3.1 V

20 mm

8 ns

SCM69C432TQ20R

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

16

FLATPACK, LOW PROFILE

.65 mm

85 Cel

64KX16

64K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

1048576 bit

3.1 V

20 mm

8 ns

MCM63F819TQ8.5

NXP Semiconductors

CACHE SRAM

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

330 mA

262144 words

COMMON

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

.65 mm

70 Cel

256KX18

256K

3.125 V

0 Cel

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

90 MHz

14 mm

4718592 bit

3.135 V

FLOW THROUGH ARCHITECTURE

YES

.005 Amp

20 mm

8.5 ns

MCM69F737TQ8

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

3-STATE

128KX36

128K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE

e0

YES

20 mm

8 ns

MCM63P819KTQ133

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4 ns

MCM69P618CTQ4R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

4 ns

MCM63P919TQ225

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

20 mm

2.6 ns

MCM63P733ATQ117

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX32

128K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4.2 ns

MCM63F737KTQ8.5

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

8.5 ns

MCM69P536CTQ7R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

7 ns

MCM63Z737TQ10

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

10 ns

MCM69F618CTQ7.5

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

7.5 ns

MCM69P536CTQ4R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

4 ns

MCM63Z916TQ10

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

20 mm

10 ns

MCM63Z836TQ7

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX36

256K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

20 mm

7 ns

MCM64Z918TQ7R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

.01 Amp

20 mm

7 ns

MCM69D618TQ8

NXP Semiconductors

MULTI-PORT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

8 ns

MCM69F618CTQ8.5R

NXP Semiconductors

CACHE SRAM

OTHER

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

110 Cel

3-STATE

64KX18

64K

20 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

1179648 bit

3.135 V

e0

YES

20 mm

8.5 ns

MCM63Z834TQ15R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

COMMON

3.3

2.5/3.3,3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

20 mm

15 ns

MCM63F737TQ9R

NXP Semiconductors

CACHE SRAM

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

370 mA

131072 words

COMMON

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

.65 mm

70 Cel

128KX36

128K

3.125 V

0 Cel

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

75 MHz

14 mm

4718592 bit

3.135 V

FLOW THROUGH ARCHITECTURE

YES

.005 Amp

20 mm

9 ns

MCM69F737TQ11R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

3-STATE

128KX36

128K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE

e0

YES

20 mm

11 ns

MCM63Z736TQ100R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

5 ns

MCM69C232TQ20

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

70 Cel

4KX64

4K

0 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

262144 bit

3.1 V

20 mm

9 ns

MCM69F737TQ11

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

3-STATE

128KX36

128K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE

e0

YES

20 mm

11 ns

MCM63Z737TQ10R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

10 ns

MCM69C233TQ15R

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

70 Cel

4KX64

4K

0 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

16 mm

262144 bit

3.1 V

20 mm

210 ns

MCM63F819KTQ9

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

9 ns

MCM63Z736TQ143

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4 ns

MCM69F819TQ8.5R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4718592 bit

3.135 V

FLOW-THROUGH

20 mm

8.5 ns

MCM69F618CTQ8R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

1179648 bit

3.135 V

e0

20 mm

8 ns

MCM69T618TQ5

NXP Semiconductors

CACHE TAG SRAM

OTHER

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

110 Cel

64KX18

64K

20 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

5 ns

MCM64Z836TQ8R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

250 mA

262144 words

COMMON

2.5

2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

.01 Amp

20 mm

8 ns

MCM63Z819TQ11R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

11 ns

MCM64Z834TQ11R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

COMMON

2.5

2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

.01 Amp

20 mm

11 ns

MCM69P536CTQ4.5

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

4.5 ns

MCM69F536CTQ12R

NXP Semiconductors

CACHE SRAM

OTHER

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

300 mA

32768 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

110 Cel

3-STATE

32KX36

32K

3.14 V

20 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

1179648 bit

3.135 V

SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL

e0

YES

.045 Amp

20 mm

12 ns

MCM69F536CTQ12

NXP Semiconductors

CACHE SRAM

OTHER

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

300 mA

32768 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

110 Cel

3-STATE

32KX36

32K

3.14 V

20 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

1179648 bit

3.135 V

SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL

e0

YES

.045 Amp

20 mm

12 ns

MCM64Z916TQ11

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

.01 Amp

20 mm

11 ns

MCM63P819KTQ166

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

3.5 ns

MCM69D618TQ6

NXP Semiconductors

MULTI-PORT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

6 ns

MCM63Z916TQ15R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

20 mm

15 ns

MCM64Z918TQ7

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

.01 Amp

20 mm

7 ns

MCM63Z736TQ100

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

5 ns

MCM69D618TQ8R

NXP Semiconductors

MULTI-PORT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

8 ns

MCM69P737TQ4

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4718592 bit

3.135 V

20 mm

4 ns

MCM69T618TQ5R

NXP Semiconductors

CACHE TAG SRAM

OTHER

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

110 Cel

64KX18

64K

20 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

5 ns

MCM64Z834TQ15R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

COMMON

2.5

2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

2.3 V

0 Cel

QUAD

R-PQFP-G100

1

2.7 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.3 V

FLOW-THROUGH OR PIPELINED ARCHTECTURE

.01 Amp

20 mm

15 ns

MCM63P733ATQ100R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX32

128K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.