QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT70V05S15JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	215 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	24.2062 mm	15 ns
71321SA55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.03 Amp	19.1262 mm	55 ns
IDT70V25L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	131072 bit	3 V		e3	40	260		.005 Amp	29.3116 mm	20 ns
7130SA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	25 ns
IDT71342LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260	YES		19.1262 mm	20 ns
IDT70105S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	1KX9	1K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	9216 bit	4.5 V		e3			YES		19.1262 mm	35 ns
IDT7014S35JM8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	4KX9	4K		-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e0			YES		19.1262 mm	35 ns
IDT70V07S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	25 ns
IDT7134LA35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	35 ns
IDT7052S35QEB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	132	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				125 Cel	3-STATE	2KX8	2K		-55 Cel	TIN LEAD	QUAD	4	S-GQCC-J132		5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES			35 ns
7130SA100JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	8192 bit	4.5 V		e3	30	260		.015 Amp		100 ns
70V25S20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	CHIP CARRIER				70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		3.6 V				131072 bit	3 V			30	260				20 ns
7134SA45JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	45 ns
IDT70914S25JBG	Renesas Electronics	MULTI-PORT SRAM	OTHER	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	SYNCHRONOUS		4096 words		5		9	CHIP CARRIER			1.27 mm	85 Cel		4KX9	4K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.57 mm	24.2062 mm	Not Qualified	36864 bit	4.5 V		e3					24.2062 mm	25 ns
IDT7142SA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3					19.1262 mm	20 ns
70V24S55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	40	260		.005 Amp	29.3116 mm	55 ns
IDT7132LA35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3					19.1262 mm	35 ns
IDT7140LA25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	25 ns
71321SA25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	19.1262 mm	25 ns
7134LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
71321LA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	16384 bit	4.5 V		e3	30	260		.0015 Amp		55 ns
IDT7132LA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.004 Amp	19.1262 mm	25 ns
IDT7024L15JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	40	260		.0015 Amp	29.3116 mm	15 ns
7005S55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		8KX8	8K		0 Cel		QUAD		S-PQCC-J68		5.5 V		24.2062 mm		65536 bit	4.5 V			30	260			24.2062 mm	55 ns
IDT70V24L55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		3.3		16	CHIP CARRIER			1.27 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J84		3.6 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					29.3116 mm	55 ns
IDT7024S70JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	30	225		.00003 Amp	29.3116 mm	70 ns
7005L20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V		24.2062 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	20 ns
IDT70V07L55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3			YES		24.2062 mm	55 ns
7130SA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	8192 bit	4.5 V		e3	30	260		.015 Amp		20 ns
IDT7164S30J8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32		5.5 V	3.55 mm	11.43 mm	Not Qualified	65536 bit	4.5 V		e0			YES		13.97 mm	29 ns
IDT7140SA35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	35 ns
70V25L25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	CHIP CARRIER			1.27 mm	85 Cel		8KX16	8K		-40 Cel		QUAD		S-PQCC-J84		3.6 V	4.572 mm	29.3116 mm		131072 bit	3 V							29.3116 mm	25 ns
IDT71586S35J8	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	4KX16	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.5 V	4.57 mm	16.5862 mm	Not Qualified	65536 bit	4.5 V		e0			YES		16.5862 mm	35 ns
HM62A188CP-25R	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH						19.1262 mm	25 ns
IDT7143LA55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	55 ns
7008L55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	230 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V			Not Qualified	524288 bit	4.5 V		e3	40	260		.005 Amp		55 ns
IDT7143SA35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		2KX16	2K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	35 ns
UPD46741ALP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX20	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68		5.5 V			Not Qualified	327680 bit	4.5 V		e0						15 ns
IDT70V06S20JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	16384 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX8	16K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V		e0	20	225		.015 Amp	24.2062 mm	20 ns
IDT70V05L55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	65536 bit	3 V		e3					24.2062 mm	55 ns
IDT7143SA55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	315 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	55 ns
70V25L25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	CHIP CARRIER				70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		3.6 V				131072 bit	3 V			30	260				25 ns
IDT7026L20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX16	16K		0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84		5.5 V	4.57 mm	29.3116 mm	Not Qualified	262144 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE	e3			YES		29.3116 mm	20 ns
70V24S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	4096 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	3.6 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	40	260		.005 Amp	29.3116 mm	25 ns
IDT7142LA100JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	19.1262 mm	100 ns
HM62A168CP-30	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH						19.1262 mm	30 ns
IDT70105S25J8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	1KX9	1K		0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	9216 bit	4.5 V		e0			YES		19.1262 mm	25 ns
IDT7024L17JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	40	260	YES	.0015 Amp	29.3116 mm	17 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.