QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71342LA55J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	55 ns
71342SA55J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	55 ns
71342LA25JI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA55J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	55 ns
71342SA20J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	20 ns
71342SA35J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	35 ns
71342LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
CY7B135-20JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K		0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	5.08 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES		19.1262 mm	20 ns
CY7C135-15JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	20	260		.015 Amp	19.1262 mm	15 ns
IDT71342SA70J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225	YES	.015 Amp	19.1262 mm	70 ns
71342SA55J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	55 ns
71342LA20J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	20 ns
71342LA70J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	70 ns
71342SA20J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	20 ns
71342SA25J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	25 ns
71342LA45J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	45 ns
71342LA70J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	70 ns
71342SA25J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	25 ns
71342SA45J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	45 ns
71342SA70J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	70 ns
71342SA70J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	70 ns
71342LA20J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	20 ns
71342LA25J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA35J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	35 ns
71342LA35J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	35 ns
71342LA45J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	20	225		.0015 Amp	19.1262 mm	45 ns
71342SA35J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	35 ns
71342SA45J8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	225		.015 Amp	19.1262 mm	45 ns
71342LA25J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
7005L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V		24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
7005L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V		24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
IDT7005L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68		5.5 V	4.57 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3	30	260			24.2062 mm	20 ns
7130LA25JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
X2004J-25	Xicor	NON-VOLATILE SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS		512 words		5	5	8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X8	512		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J32		5.25 V			Not Qualified	4096 bit	4.75 V		e0			YES			250 ns
7007L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	3	5.5 V			Not Qualified	262144 bit	4.5 V		e3		260		.01 Amp		20 ns
IDT71321LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	19.1262 mm	20 ns
IDT71321LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
CY7C131E-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C131E-55JXCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	19.1262 mm	55 ns
7007L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
IDT7130LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
71321LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
71321LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
IDT7007L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
IDT7130LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
71321SA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp		55 ns
IDT7130LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
IDT7133LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.