Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e0 |
YES |
.015 Amp |
19.1262 mm |
55 ns |
||||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
-40 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-PQCC-J52 |
1 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e0 |
30 |
225 |
YES |
19.1262 mm |
55 ns |
|||||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e3 |
20 |
260 |
.015 Amp |
19.1262 mm |
55 ns |
||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e3 |
20 |
260 |
YES |
.015 Amp |
19.1262 mm |
55 ns |
|||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
275 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
19.1262 mm |
25 ns |
|||||||||||
Motorola |
CACHE SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
165 mA |
32768 words |
COMMON |
5 |
5 |
9 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
0 Cel |
TIN LEAD |
QUAD |
1 |
S-PQCC-J44 |
5.5 V |
4.57 mm |
16.5862 mm |
Not Qualified |
294912 bit |
4.5 V |
OUTPUT BUFFER SUPPLY VOLTAGE 5V +/- 10% OR 3.3V +/- 10%; SELF-TIMED WRITE; BURST COUNTER |
e0 |
YES |
.03 Amp |
16.5862 mm |
14 ns |
||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
16384 bit |
4.5 V |
NO |
11.5062 mm |
20 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
16 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
32768 bit |
4.75 V |
NO |
16.5862 mm |
20 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
16384 words |
5 |
5 |
4 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
70 Cel |
16KX4 |
16K |
0 Cel |
QUAD |
R-PQCC-J32 |
Not Qualified |
65536 bit |
12 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQCC-J44 |
Not Qualified |
16384 bit |
28 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
5 |
CHIP CARRIER |
70 Cel |
3-STATE |
16KX5 |
16K |
0 Cel |
QUAD |
1 |
R-PQCC-J32 |
Not Qualified |
81920 bit |
NO |
12 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
16384 words |
5 |
5 |
4 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
QUAD |
1 |
R-PQCC-J32 |
5.25 V |
Not Qualified |
65536 bit |
4.75 V |
8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.15 Amp |
17 ns |
||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
5 |
CHIP CARRIER |
70 Cel |
3-STATE |
16KX5 |
16K |
0 Cel |
QUAD |
1 |
R-PQCC-J32 |
Not Qualified |
81920 bit |
NO |
12 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
73728 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.16 Amp |
16.5862 mm |
22 ns |
||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
73728 bit |
4.75 V |
YES |
16.5862 mm |
22 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
16384 bit |
4.5 V |
NO |
11.5062 mm |
25 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
125 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
16384 bit |
|||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
11 |
CHIP CARRIER |
1.27 mm |
70 Cel |
TOTEM POLE |
1KX11 |
1K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.25 V |
4.57 mm |
11.5062 mm |
Not Qualified |
11264 bit |
4.75 V |
NO |
11.5062 mm |
22 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
1024 words |
5 |
5 |
12 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX12 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
12288 bit |
28 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
CACHE SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
0 Cel |
QUAD |
1 |
S-PQCC-J52 |
5.25 V |
4.57 mm |
19.1262 mm |
Not Qualified |
147456 bit |
4.75 V |
CONFIGURED AS 2-WAY 4K X 18 OR DIRECT MAPPED 8K X 18 |
YES |
19.1262 mm |
25 ns |
||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
5 |
CHIP CARRIER |
70 Cel |
16KX5 |
16K |
0 Cel |
QUAD |
R-PQCC-J32 |
Not Qualified |
81920 bit |
|||||||||||||||||||||||||||||||||
Texas Instruments |
MULTI-PORT SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
TTL |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
QUAD |
2 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
64 bit |
4.5 V |
DUAL MEMORY FOR MULTIBUS ARCHITECTURE |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
15 ns |
||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
11 |
CHIP CARRIER |
1.27 mm |
70 Cel |
TOTEM POLE |
1KX11 |
1K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.25 V |
4.57 mm |
11.5062 mm |
Not Qualified |
11264 bit |
4.75 V |
NO |
11.5062 mm |
22 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
8 |
CHIP CARRIER |
1.27 mm |
2KX8 |
2K |
QUAD |
S-PQCC-J44 |
4.57 mm |
16.5862 mm |
Not Qualified |
16384 bit |
16.5862 mm |
|||||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.5 V |
4.57 mm |
16.5862 mm |
Not Qualified |
16384 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.125 Amp |
16.5862 mm |
22 ns |
||||||||||||||||
Texas Instruments |
MULTI-PORT SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
TTL |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
QUAD |
2 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
64 bit |
4.5 V |
DUAL MEMORY FOR MULTIBUS ARCHITECTURE |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
|||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
73728 bit |
4.75 V |
YES |
16.5862 mm |
22 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
16384 words |
5 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
16KX5 |
16K |
QUAD |
R-PQCC-J32 |
Not Qualified |
81920 bit |
12 ns |
|||||||||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
QUAD |
S-PQCC-J44 |
Not Qualified |
73728 bit |
25 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
CHIP CARRIER |
LDCC20,.4SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4X4 |
4 |
0 Cel |
QUAD |
1 |
S-PQCC-J20 |
5.25 V |
4.57 mm |
8.9662 mm |
Not Qualified |
16 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
8.9662 mm |
45 ns |
||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
16384 words |
5 |
5 |
5 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX5 |
16K |
0 Cel |
QUAD |
1 |
R-PQCC-J32 |
5.25 V |
Not Qualified |
81920 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.15 Amp |
18 ns |
|||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
190 mA |
2048 words |
5 |
5 |
16 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQCC-J44 |
Not Qualified |
32768 bit |
.15 Amp |
20 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
16384 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
25 ns |
|||||||||||||||||
Texas Instruments |
CACHE SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
8192 words |
COMMON |
18 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
0 Cel |
QUAD |
S-PQCC-J52 |
4.57 mm |
19.1262 mm |
Not Qualified |
147456 bit |
NOT SPECIFIED |
NOT SPECIFIED |
19.1262 mm |
||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
16384 words |
5 |
5 |
5 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX5 |
16K |
0 Cel |
QUAD |
1 |
R-PQCC-J32 |
5.25 V |
Not Qualified |
81920 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.15 Amp |
20 ns |
|||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
16 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
32768 bit |
4.75 V |
NO |
16.5862 mm |
20 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
16384 words |
5 |
5 |
4 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
65536 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.15 Amp |
16.5862 mm |
20 ns |
||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
QUAD |
S-PQCC-J44 |
4.57 mm |
16.5862 mm |
Not Qualified |
73728 bit |
16.5862 mm |
|||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
4 |
CHIP CARRIER |
8KX4 |
8K |
QUAD |
R-PQCC-J32 |
Not Qualified |
32768 bit |
|||||||||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
16384 words |
4 |
CHIP CARRIER |
LDCC32,.5X.6 |
SRAMs |
1.27 mm |
16KX4 |
16K |
QUAD |
R-PQCC-J32 |
Not Qualified |
65536 bit |
12 ns |
|||||||||||||||||||||||||||||||||||||
Texas Instruments |
CACHE SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
0 Cel |
QUAD |
1 |
S-PQCC-J52 |
5.25 V |
4.57 mm |
19.1262 mm |
Not Qualified |
147456 bit |
4.75 V |
CONFIGURED AS 2-WAY 4K X 18 OR DIRECT MAPPED 8K X 18 |
YES |
19.1262 mm |
25 ns |
||||||||||||||||||||||
Texas Instruments |
MULTI-PORT SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
TTL |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
QUAD |
2 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
64 bit |
4.5 V |
DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
|||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
125 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
16384 bit |
|||||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
16384 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
25 ns |
|||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
16384 words |
5 |
5 |
4 |
CHIP CARRIER |
LDCC44,.7SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
QUAD |
1 |
S-PQCC-J44 |
5.25 V |
4.57 mm |
16.5862 mm |
Not Qualified |
65536 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.15 Amp |
16.5862 mm |
20 ns |
||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
QUAD |
1 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
16384 bit |
4.5 V |
NO |
11.5062 mm |
20 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
QUAD |
S-PQCC-J44 |
4.57 mm |
16.5862 mm |
Not Qualified |
73728 bit |
16.5862 mm |
|||||||||||||||||||||||||||||
Texas Instruments |
MULTI-PORT SRAM |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
TTL |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
QUAD |
2 |
S-PQCC-J28 |
5.5 V |
4.57 mm |
11.5062 mm |
Not Qualified |
64 bit |
4.5 V |
DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.5062 mm |
16 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.