QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK4202Q25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	25 ns
MK4511K-12	STMicroelectronics	MULTI-PORT SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	25 mA	512 words	COMMON			9	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X9	512	4.5 V	0 Cel	TIN LEAD	QUAD	2, (MUXED)	R-PQCC-J32					Not Qualified				e0				.001 Amp		120 ns
MK4202Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	17 ns
MK4511K-15	STMicroelectronics	MULTI-PORT SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	25 mA	512 words	COMMON			9	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X9	512	4.5 V	0 Cel	TIN LEAD	QUAD	2, (MUXED)	R-PQCC-J32					Not Qualified				e0				.001 Amp		150 ns
MK62486Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	24 ns
M62940AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	14 ns
MK62940AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	11 ns
M62486AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	11 ns
T74LS170C1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4 words		5		4	CHIP CARRIER			1.27 mm	70 Cel		4X4	4		0 Cel		QUAD		S-PQCC-J20		5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V							8.9662 mm	40 ns
M62940AQ12	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44					Not Qualified	294912 bit			e0				.03 Amp		12 ns
MK48C12AK15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32		5.5 V	3.56 mm	11.455 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp	13.995 mm	150 ns
MK62940AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	12 ns
M62940AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	11 ns
M62486AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	12 ns
MK4511K-20	STMicroelectronics	MULTI-PORT SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	25 mA	512 words	COMMON			9	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X9	512	4.5 V	0 Cel	TIN LEAD	QUAD	2, (MUXED)	R-PQCC-J32					Not Qualified				e0				.001 Amp		200 ns
M62486RQ8TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	8 ns
MK62940Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	24 ns
MCM67B618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES	.095 Amp	19.1262 mm	10 ns
MCM67A618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0			YES	.02 Amp	19.1262 mm	12 ns
MCM67A618AFN15	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0			YES	.02 Amp	19.1262 mm	15 ns
MCM67M618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES	.095 Amp	19.1262 mm	12 ns
MCM67M618AFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	9 ns
MCM67M618BFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V		19.125 mm		1179648 bit	4.75 V							19.125 mm	9 ns
MCM67A618BFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V		19.1262 mm		1179648 bit	4.75 V							19.1262 mm	10 ns
MCM67B618BFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V		19.1262 mm		1179648 bit	4.75 V							19.1262 mm	9 ns
MCM67B618AFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	9 ns
MCM67A618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	10 ns
MCM67M618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES		19.1262 mm	10 ns
MCM67B618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES	.095 Amp	19.1262 mm	12 ns
GVT7164B19C-10	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	10 ns
GVT7164B19C-8	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	8 ns
GVT7164B19C-9	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.125 mm		1179648 bit	4.75 V							19.125 mm	9 ns
SAE81C80A	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44					Not Qualified				e0				.000001 Amp		186 ns
SAE81C80B	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	110 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44					Not Qualified				e0				.000001 Amp		166 ns
SAE81C80	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44					Not Qualified				e0				.000001 Amp		166 ns
SAB81C80	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	504X8	504		0 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44					Not Qualified				e0				.000001 Amp		166 ns
CY7C1032-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-J52					Not Qualified	1179648 bit			e0				.015 Amp		14 ns
CY7C146-15JXCT	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52	3	5.5 V	5.08 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e3	30	260			19.1262 mm	15 ns
CY7C1031-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	TIN LEAD	QUAD		S-XQCC-J52					Not Qualified	1179648 bit			e0				.015 Amp		14 ns
CY7C1032-14JC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52					Not Qualified	1179648 bit			e0				.01 Amp		14 ns
CY7C1031-14JC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.5 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52					Not Qualified	1179648 bit			e0				.01 Amp		14 ns
TC55188T-25	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	25 ns
TC55187T-25	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	25 ns
TC55187T-30	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	30 ns
TC55188T-30	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	30 ns
TC55188T-20	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	230 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	20 ns
TC55187T-20	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	230 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	20 ns
7140SA100JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e0	20	225		.03 Amp	19.1262 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.