QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SN74ACT2154A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SN74ACT2152A-25FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V					NO		11.5062 mm	25 ns
SN74ACT2156FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words				4	CHIP CARRIER			1.27 mm	70 Cel		16KX4	16K		0 Cel		QUAD		S-PQCC-J44		4.57 mm	16.5862 mm	Not Qualified	65536 bit								16.5862 mm
SN74BCT2165-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX4	16K				QUAD		R-PQCC-J32				Not Qualified	65536 bit									12 ns
SN74ACT2160-17FMR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND				16384 words		5	5	4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		16KX4	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	65536 bit									17 ns
SN74LS170FN	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	70 Cel	OPEN-COLLECTOR	4X4	4		0 Cel		QUAD	1	S-PQCC-J20	5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO		8.9662 mm	40 ns
SN74ACT2153-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND				1024 words		5	5	12	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		1KX12	1K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	12288 bit									25 ns
SN74ACT2151FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28	5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74ACT2159-22FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	8192 words		5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K		0 Cel		QUAD	1	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified	73728 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	YES	.16 Amp	16.5862 mm	22 ns
SN74BCT2160FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER					3-STATE	16KX4	16K				QUAD	1	R-PQCC-J32				Not Qualified	65536 bit		8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM				NO			12 ns
SN74ACT2155-22FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified	16384 bit	4.5 V					YES		16.5862 mm	22 ns
SN74BCT2164-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX5	16K				QUAD		R-PQCC-J32				Not Qualified	81920 bit									12 ns
SN74ACT2152A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SN74BCT2163-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX5	16K				QUAD		R-PQCC-J32				Not Qualified	81920 bit									12 ns
SN74ACT2160FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words				4	CHIP CARRIER						8KX4	8K				QUAD		R-PQCC-J32				Not Qualified	32768 bit
SN74ACT2153FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28	5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74BCT2163FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32				Not Qualified	81920 bit						NO			12 ns
SN74ACT2163FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel		16KX5	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	81920 bit
SN74ACT2152-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
SN74ACT2140A-25FN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD		S-PQCC-J52				Not Qualified	147456 bit									25 ns
SN74ACT2154-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
MC10H145FNR2	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL	-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	QUAD		S-PQCC-J20		4.57 mm	8.965 mm	Not Qualified	64 bit			e0					8.965 mm	6 ns
MC10H145FN	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL	-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	QUAD		S-PQCC-J20		4.57 mm	8.965 mm	Not Qualified	64 bit			e0					8.965 mm	6 ns
MK45180Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0			YES	.13 Amp	24.23 mm	20 ns
M62486AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	11 ns
T74LS670C1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4 words		5		4	CHIP CARRIER			1.27 mm	70 Cel		4X4	4		0 Cel		QUAD		S-PQCC-J20	5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V							8.9662 mm	45 ns
MK48C02AK20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32	5.5 V	3.55 mm	11.43 mm	Not Qualified	16384 bit	4.75 V		e0			YES	.001 Amp	13.97 mm	200 ns
MK48C12AK25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32	5.5 V	3.56 mm	11.455 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp	13.995 mm	250 ns
M62486RQ8	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	8 ns
M62486AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	14 ns
M74HC670C1	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	4X4	4		-40 Cel	TIN LEAD	QUAD	1	S-PQCC-J20	6 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	2 V		e0			NO		8.9662 mm	49 ns
MK4202Q-22	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.5 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.5 V		e0			YES	.05 Amp	24.23 mm	25 ns
M62940AQ11	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	294912 bit			e0				.03 Amp		11 ns
MK62940AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	14 ns
M62486RQ9	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	9 ns
MK4202Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	20 ns
MK62940Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
MK45180Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0			YES	.13 Amp	24.23 mm	17 ns
M62486AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	12 ns
MK4202Q17/05	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			250 mA	2048 words				20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		2KX20	2K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				Not Qualified	40960 bit			e0				.05 Amp		17 ns
MK48C02AK15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32	5.5 V	3.56 mm	11.455 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp	13.995 mm	150 ns
MK48C12AK20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32	5.5 V	3.56 mm	11.455 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp	13.995 mm	200 ns
M62940AQ14	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	294912 bit			e0				.03 Amp		14 ns
M62940AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	12 ns
MK62486Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
M62486AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	14 ns
MK48C02AK25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5		8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	QUAD	1	R-PQCC-J32	5.5 V	3.55 mm	11.43 mm	Not Qualified	16384 bit	4.75 V		e0			YES	.001 Amp	13.97 mm	250 ns
M62486RQ9TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	9 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.