QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7006L45JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	290 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e3					24.2062 mm	45 ns
70V06L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	25 ns
70121S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260		.015 Amp		35 ns
7007S25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns
70V06L35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	35 ns
70V06S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	35 ns
7007L55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	55 ns
7024S20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00003 Amp	29.3116 mm	20 ns
70V06L55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	55 ns
HM67B1864-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER						19.1262 mm	12 ns
7025L25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQCC-J84		5.5 V		29.3116 mm		131072 bit	4.5 V							29.3116 mm	25 ns
7025S55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J84		5.5 V	4.572 mm	29.3116 mm		131072 bit	4.5 V		e3	40	260			29.3116 mm	55 ns
7016L12JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	16384 words	COMMON	5	5	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	YES	.005 Amp	24.2062 mm	12 ns
7024S20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			2.54 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3					29.3116 mm	20 ns
70V06L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	3.6 V	4.57 mm	24.2062 mm	Not Qualified	131072 bit	3 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
7006L35FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	35 ns
7026S20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				70 Cel		16KX16	16K		0 Cel		QUAD		S-PQCC-J84		5.5 V				262144 bit	4.5 V								20 ns
7006L17FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3				.0015 Amp	24.2062 mm	17 ns
7024S35JGI8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		16	CHIP CARRIER			2.54 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3					29.3116 mm	35 ns
7024S35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00003 Amp	29.3116 mm	35 ns
70125S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V			Not Qualified	18432 bit	4.5 V		e3	30	260		.015 Amp		35 ns
7007S55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	310 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	55 ns
7006S55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	55 ns
7006S15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	15 ns
7006L55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX8	16K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	55 ns
7006L55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	295 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
70V05S15JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.572 mm	24.2062 mm	Not Qualified	65536 bit	3 V		e3					24.2062 mm	15 ns
7006S55JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	315 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
70V16L15J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	15 ns
70V16L20J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	20 ns
70V16S25J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	25 ns
70V15L25J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	25 ns
70V15S25J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	25 ns
70V15S20J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	20 ns
70V15S20JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX9	8K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.015 Amp	24.2062 mm	20 ns
70V15L20J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	20 ns
70V16S15J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	215 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	15 ns
70V15L15J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	15 ns
70V16S20JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX9	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.015 Amp	24.2062 mm	20 ns
70V15S15J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	215 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	15 ns
70V16S20J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	20 ns
70V16L25J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	25 ns
70V16L20JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	195 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX9	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	20 ns
70V15L20JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX9	8K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm	24.2062 mm	Not Qualified	73728 bit	3 V		e0	20	225		.005 Amp	24.2062 mm	20 ns
7007L35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	35 ns
7026L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				85 Cel		16KX16	16K		-40 Cel		QUAD		S-PQCC-J84		5.5 V				262144 bit	4.5 V								20 ns
70V05L35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm	24.2062 mm	Not Qualified	65536 bit	3 V		e3					24.2062 mm	35 ns
7006S35FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.