QCCJ SRAM 2,126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM718B513J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718BV87T-90000	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V					19.1262 mm	9 ns
KM718B86J-12	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	12 ns
KM78C80J-35	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	210 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.5 V		e0	YES	.21 Amp	19.1262 mm	35 ns
KM718B514J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV520J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
KM79C86J-19	Samsung	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified	294912 bit	4.5 V	SELF-TIMED WRITE; BURST COUNTER	e0	YES	.05 Amp	16.5862 mm	19 ns
KM718BV514J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV513J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718BV513J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM79C86J-14	Samsung	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	190 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified	294912 bit	4.5 V	SELF-TIMED WRITE; BURST COUNTER	e0	YES	.05 Amp	16.5862 mm	14 ns
KM718B91J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	9 ns
KM79C86-19	Samsung	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified	294912 bit	4.5 V	REGISTERED INPUT; BURST COUNTER		YES		16.5862 mm	19 ns
KM718B91J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	8 ns
KM718B86J-8	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	8 ns
KM718B521J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718B520J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718B513J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV87J-9	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0	YES	.08 Amp	19.05 mm	9 ns
KM718B520J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
MT56C2818EJ-24TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		19.1262 mm	24 ns
MT5C2516EJ-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX16	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	25 ns
MT58LC64K18P3EJ-7	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0		.002 Amp	19.1262 mm	7 ns
MT5C2818EJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	16384 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	19.1262 mm	25 ns
MT58LC64K18M1EJ-14PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0	YES		19.1262 mm	14 ns
MT5C6416EJ-35	Micron Technology	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	65536 bit			e0				35 ns
MT58LC64K18D7EJ-4.5PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	4.5 ns
MT5C2818EJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	19.1262 mm	15 ns
MT58LC64K18C4EJ-7LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				7 ns
MT58LC64K18C4EJ-4.5PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	4.5 ns
MT58LC64K18D7EJ-6	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		6 ns
MT58LC64K18A6EJ-4.5	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		4.5 ns
MT58LC64K18D7EJ-6LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				6 ns
MT56C3816EJ-25	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	25 ns
MT5C2516EJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	19.1262 mm	15 ns
MT58LC64K18M1EJ-14	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		14 ns
MT5LC2818EJ-25	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	3 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.63 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	3 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.01 Amp	19.1262 mm	25 ns
MT58LC64K18F5EJ-20	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0		.002 Amp	19.1262 mm	20 ns
MT58LC64K18D7EJ-4.5L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	425 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	4.5 ns
MT58LC64K18A6EJ-7L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	7 ns
MT58LC64K18C4EJ-4.5LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	4.5 ns
MT58LC64K18M1EJ-9LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				9 ns
MT58LC64K18D7EJ-8LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				8 ns
MT58LC64K18D7EJ-5LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				5 ns
MT5C2516EJ-17	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.01 Amp	19.1262 mm	17 ns
MT58LC64K18A6EJ-5	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		5 ns
MT58LC64K18A6EJ-5P	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES	.002 Amp	19.1262 mm	5 ns
MT58LC64K18D7EJ-5	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.