QFP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
7052S25PFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		25 ns
70V05L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260	.005 Amp	14 mm	20 ns
7035L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK				70 Cel		8KX18	8K		0 Cel		QUAD		S-PQFP-G100		5.5 V					147456 bit	4.5 V							20 ns
70V7599S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	830 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		QUAD	2	S-PQFP-G208		3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				.04 Amp		3.6 ns
7024L55FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				85 Cel		4KX16	4K		-40 Cel		QUAD		S-PQFP-G84		5.5 V					65536 bit	4.5 V							55 ns
70V35S25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		3.3		18	FLATPACK				70 Cel		8KX18	8K		0 Cel		QUAD		S-PQFP-G100		3.6 V					147456 bit	3 V			30	260			25 ns
7143SA90PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	90 ns
7025L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	8192 words		5		16	FLATPACK			.5 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		131072 bit	4.5 V						14 mm	20 ns
7006L35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260	.0015 Amp	14 mm	35 ns
7143SA70PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	70 ns
7024L35FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQFP-G84		5.5 V					65536 bit	4.5 V							35 ns
70V9089S7PF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3			83 MHz		Not Qualified	524288 bit			e0	20	240	.005 Amp		18 ns
709379L9PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		5		18	FLATPACK				70 Cel		32KX18	32K		0 Cel		QUAD		S-PQFP-G100		5.5 V					589824 bit	4.5 V							9 ns
7143SA35PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	35 ns
7006S20PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260	.03 Amp	14 mm	20 ns
70261L55PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				70 Cel		16KX16	16K		0 Cel		QUAD		S-PQFP-G100		5.5 V					262144 bit	4.5 V							55 ns
7024S55FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3			.00003 Amp		55 ns
70261S20PFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				85 Cel		16KX16	16K		-40 Cel		QUAD		S-PQFP-G100		5.5 V					262144 bit	4.5 V							20 ns
7027L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK				85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		5.5 V					524288 bit	4.5 V							25 ns
7143LA35PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	35 ns
70V9179L9PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				85 Cel		32KX9	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			9 ns
70V3599S133DRGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.04 Amp		4.2 ns
70V7519S166DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK				85 Cel		256KX36	256K		-40 Cel		QUAD		S-PQFP-G208		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE						3.6 ns
7052S35PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		35 ns
70V08L20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	FLATPACK				70 Cel		64KX8	64K		0 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V							20 ns
70V07L35PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	3.3	3.3	8	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G80	3	3.6 V				Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260	.003 Amp		35 ns
HM67B3632FP1-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE					20 mm	9 ns
7143LA90PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	90 ns
70V7599S133DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	645 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		QUAD	2	S-PQFP-G208		3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				.03 Amp		4.2 ns
7027L25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK				70 Cel		32KX16	32K		0 Cel		QUAD		S-PQFP-G100		5.5 V					524288 bit	4.5 V							25 ns
7006S17PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260	.015 Amp	14 mm	17 ns
7143LA45PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK			.5 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V						14 mm	45 ns
7024L55PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQFP-G100		5.5 V					65536 bit	4.5 V							55 ns
70V908L30PF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	175 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3					Not Qualified	524288 bit			e0	20	240	.003 Amp		30 ns
70V3399S166PRFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP128,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	R-PQFP-G128	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.03 Amp		4 ns
7024S15FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3			.000015 Amp		15 ns
70V9179L9PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				70 Cel		32KX9	32K		0 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			9 ns
70V35S20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		3.3		18	FLATPACK				85 Cel		8KX18	8K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					147456 bit	3 V			30	260			20 ns
70261S20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				70 Cel		16KX16	16K		0 Cel		QUAD		S-PQFP-G100		5.5 V					262144 bit	4.5 V							20 ns
7006S20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX8	16K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260	.03 Amp	14 mm	20 ns
70V7599S166DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	830 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		QUAD	2	S-PQFP-G208		3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				.04 Amp		3.6 ns
7024L25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3			.0015 Amp		25 ns
709149S10PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words		5		9	FLATPACK				85 Cel		4KX9	4K		-40 Cel		QUAD		S-PQFP-G80		5.5 V					36864 bit	4.5 V	PIPELINED ARCHITECTURE						10 ns
7007L25PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	265 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.65 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V		e3	30	260	.005 Amp	14 mm	25 ns
70914S20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	290 mA	4096 words	COMMON	5	5	9	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	70 Cel	3-STATE	4KX9	4K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	36864 bit	4.5 V		e3	30	260	.015 Amp	14 mm	20 ns
70V9279S7PRFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	370 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3			83 MHz		Not Qualified	524288 bit			e3	30	260	.02 Amp		7.5 ns
70V9179L9PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				85 Cel		32KX9	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			9 ns
70261L25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				85 Cel		16KX16	16K		-40 Cel		QUAD		S-PQFP-G100		5.5 V					262144 bit	4.5 V							25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.