QFP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
71321LA55PPGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				85 Cel		2KX8	2K		-40 Cel	Tin (Sn)	QUAD		S-PQFP-G52	3	5.5 V					16384 bit	4.5 V		e3	NOT SPECIFIED	260			55 ns
5962-9461110HMA	Defense Logistics Agency	SRAM MODULE	MILITARY		QFP		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		32	FLATPACK			1.27 mm	125 Cel		512KX32	512K		-55 Cel	TIN LEAD	QUAD				5.5 V	5.08 mm		22.352 mm	Qualified	16777216 bit	4.5 V		e0				22.352 mm	17 ns
71321LA55PPGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				85 Cel		2KX8	2K		-40 Cel	Tin (Sn)	QUAD		S-PQFP-G52	3	5.5 V					16384 bit	4.5 V		e3	NOT SPECIFIED	260			55 ns
IDT70V261L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V				Not Qualified	262144 bit	3 V		e3	30	260	.003 Amp		25 ns
70V24L15PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		3.3		16	FLATPACK				85 Cel		4KX16	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V					65536 bit	3 V		e3		260			15 ns
70V27L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V				Not Qualified	524288 bit	3 V		e3	30	260	.006 Amp		20 ns
7008L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	325 mA	65536 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V				Not Qualified	524288 bit	4.5 V		e3	30	260	.005 Amp		15 ns
71V3576S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.035 Amp		3.8 ns
IDT71V3576S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	4718592 bit			e3	30	260	.035 Amp		3.8 ns
70V27L15PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	FLATPACK				85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V							15 ns
IDT71T75802S133PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	215 mA	1048576 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V		133 MHz		Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e3	30	260	.06 Amp		4.2 ns
70261L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				85 Cel		16KX16	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V					262144 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3		260			20 ns
70V27L15PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	FLATPACK				85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V							15 ns
70V25S25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3					Not Qualified	131072 bit			e0	20	240	.015 Amp		25 ns
7007L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	315 mA	32768 words	COMMON	5	5	8	FLATPACK	PGA68,11X11	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V		e3		260	.01 Amp	14 mm	20 ns
70V35S20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX18	8K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3					Not Qualified	147456 bit			e0	20	240	.015 Amp		20 ns
70V9269L9PRFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK				70 Cel		16KX16	16K		0 Cel	TIN	QUAD		R-PQFP-G128	3	3.6 V					262144 bit	3 V		e3		260			9 ns
70V9279L7PRFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	335 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	MATTE TIN	QUAD	2	R-PQFP-G128	3			83 MHz		Not Qualified	524288 bit			e3	30	260	.015 Amp		7.5 ns
70V9289L7PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V		83 MHz		Not Qualified	1048576 bit	3 V		e3	30	260	.002 Amp		7.5 ns
7130LA25TFGI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	8192 bit	4.5 V		e3	30	260	.004 Amp		25 ns
7130LA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	8192 bit			e0	30	240	.004 Amp		55 ns
71342SA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	32768 bit	4.5 V		e0			.015 Amp		55 ns
71421SA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	16384 bit			e0	30	240	.03 Amp		25 ns
71V546S133PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e3	30	260	.045 Amp		4.2 ns
71V65703S85PFG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK				70 Cel		256KX36	256K		0 Cel	TIN	QUAD		R-PQFP-G100	3	3.465 V					9437184 bit	3.135 V	FLOW-THROUGH	e3	30	260			8.5 ns
IDT71T75602S133PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V		133 MHz		Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e3	30	260	.06 Amp		4.2 ns
IDT71T75602S150PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	235 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	18874368 bit			e3	30	260	.06 Amp		3.8 ns
IDT71V67903S75PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	285 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			117 MHz		Not Qualified	9437184 bit			e3	30	260	.07 Amp		7.5 ns
IDT71V67903S85PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V		87 MHz		Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH	e3	30	260	.07 Amp		8.5 ns
7007L20PFGI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V				Not Qualified	262144 bit	4.5 V		e3	30	260	.01 Amp		20 ns
7024L55PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX16	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3					Not Qualified	65536 bit			e0	20	240	.004 Amp		55 ns
CY7C136E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3			.015 Amp	10 mm	25 ns
CY7C131E-15NXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260	.015 Amp	10 mm	15 ns
CY7C131E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260	.015 Amp	10 mm	25 ns
CY7C1356C-166AXIT	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3			166 MHz		Not Qualified	9437184 bit			e4	40	260	.04 Amp		3.5 ns
CY7C136-55NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G52	3	5.5 V	2.45 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3	20	260	.015 Amp	10 mm	55 ns
M63532P-9LT1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	3 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100				59.8 MHz		Not Qualified	1048576 bit			e0			.002 Amp		9 ns
M63532P-8LT1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	3 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100				66.6 MHz		Not Qualified	1048576 bit			e0			.002 Amp		8 ns
M63532P-7LT1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	3 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100				75 MHz		Not Qualified	1048576 bit			e0			.002 Amp		7 ns
MCM63Z918TQ8	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8 ns
MCM63Z918TQ8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8 ns
MCM63Z918TQ7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	7 ns
MCM63V736TQ5	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD	2	S-PQFP-G176						Not Qualified	4718592 bit						.1 Amp		5 ns
MCM63P631ATQ66R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel		QUAD		R-PQFP-G100				66 MHz		Not Qualified	2097152 bit						.002 Amp		8 ns
MCM63P631TQ117R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel		QUAD		R-PQFP-G100				117 MHz		Not Qualified	2097152 bit						.002 Amp		4.5 ns
MCM63Z918TQ8.5R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8.5 ns
MCM63P631ATQ75	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel		QUAD		R-PQFP-G100				75 MHz		Not Qualified	2097152 bit						.002 Amp		7 ns
MCM63Z918TQ7	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	7 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.