Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
1.8/2.5,2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
0 Cel |
QUAD |
R-PQFP-G100 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
75497472 bit |
e4 |
40 |
260 |
3 ns |
|||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
75497472 bit |
e4 |
40 |
260 |
3 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
9437184 bit |
e4 |
40 |
260 |
.04 Amp |
3 ns |
|||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
133 MHz |
Not Qualified |
1179648 bit |
.04 Amp |
6.5 ns |
|||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
2 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G100 |
Not Qualified |
73728 bit |
.0015 Amp |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
167 MHz |
Not Qualified |
75497472 bit |
e4 |
40 |
260 |
3.4 ns |
|||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
190 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
150 MHz |
Not Qualified |
18874368 bit |
.03 Amp |
3.8 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
133 MHz |
Not Qualified |
4718592 bit |
e4 |
40 |
260 |
.04 Amp |
6.5 ns |
||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
166 MHz |
Not Qualified |
18874368 bit |
e0 |
.015 Amp |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
2097152 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
75497472 bit |
e4 |
40 |
260 |
3 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
75497472 bit |
e4 |
40 |
260 |
3 ns |
|||||||||||||||||||
Infineon Technologies |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
305 mA |
16384 words |
COMMON |
5 |
5 |
9 |
FLATPACK |
QFP80,.64SQ |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
4.5 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G80 |
Not Qualified |
147456 bit |
.0005 Amp |
15 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
90 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
55 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
35 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
Not Qualified |
8192 bit |
e0 |
30 |
240 |
.004 Amp |
100 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
Not Qualified |
8192 bit |
e0 |
30 |
240 |
.0015 Amp |
25 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
Not Qualified |
16384 bit |
e0 |
.0015 Amp |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
85 Cel |
2KX8 |
2K |
-40 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
90 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
20 ns |
||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
25 ns |
||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
55 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
25 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
55 ns |
||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
55 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
55 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
100 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
Not Qualified |
16384 bit |
e0 |
.004 Amp |
55 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
35 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
85 Cel |
2KX8 |
2K |
-40 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
25 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
25 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
Not Qualified |
8192 bit |
e0 |
30 |
240 |
.0015 Amp |
100 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
16384 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
25 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
90 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.