Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
55 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
18 |
FLATPACK |
70 Cel |
8KX18 |
8K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
147456 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
290 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
83 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.015 Amp |
7.5 ns |
|||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
90 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
QFP |
UNSPECIFIED |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
675 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.15 V |
-40 Cel |
QUAD |
2 |
X-PQFP-G208 |
3.45 V |
133 MHz |
Not Qualified |
4718592 bit |
3.15 V |
.04 Amp |
4.2 ns |
||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
66 MHz |
Not Qualified |
1048576 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
9 ns |
|||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G208 |
3 |
3.45 V |
166 MHz |
Not Qualified |
4718592 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e3 |
.03 Amp |
3.6 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
70 Cel |
4KX16 |
4K |
0 Cel |
QUAD |
S-PQFP-G84 |
5.5 V |
65536 bit |
4.5 V |
17 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
8192 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
131072 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.000015 Amp |
20 ns |
|||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP128,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
133 MHz |
Not Qualified |
2359296 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e3 |
.03 Amp |
4.2 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
FLATPACK |
.5 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
9 |
FLATPACK |
.5 mm |
85 Cel |
32KX9 |
32K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
294912 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
14 mm |
9 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
9 |
FLATPACK |
.5 mm |
70 Cel |
32KX9 |
32K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
294912 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
14 mm |
9 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
FLATPACK |
.5 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
150 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
9 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
830 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G208 |
3 |
3.45 V |
166 MHz |
Not Qualified |
2359296 bit |
3.15 V |
e0 |
225 |
.04 Amp |
3.6 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
675 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G208 |
3 |
3.45 V |
133 MHz |
Not Qualified |
2359296 bit |
3.15 V |
e0 |
225 |
.04 Amp |
4.2 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
9 |
FLATPACK |
.5 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
14 mm |
9 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
645 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G208 |
3 |
3.45 V |
133 MHz |
Not Qualified |
2359296 bit |
3.15 V |
e0 |
225 |
.03 Amp |
4.2 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
175 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
9 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
9 |
FLATPACK |
70 Cel |
32KX9 |
32K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
Not Qualified |
294912 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
7.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
18 |
FLATPACK |
.5 mm |
70 Cel |
8KX18 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
65536 words |
COMMON |
5 |
5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX9 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
9 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
175 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
9 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
FLATPACK |
.5 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
9 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
465 mA |
65536 words |
COMMON |
5 |
5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX9 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
7.5 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
83 MHz |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
7 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
790 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G208 |
3 |
3.45 V |
166 MHz |
Not Qualified |
2359296 bit |
3.15 V |
e0 |
225 |
.03 Amp |
3.6 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
355 mA |
65536 words |
COMMON |
5 |
5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX9 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
12 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
9 |
FLATPACK |
70 Cel |
64KX9 |
64K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
Not Qualified |
589824 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
6.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
83 MHz |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
7 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
9 |
FLATPACK |
.5 mm |
70 Cel |
32KX9 |
32K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
294912 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
14 mm |
12 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
18 |
FLATPACK |
.5 mm |
70 Cel |
8KX18 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
16 |
FLATPACK |
.5 mm |
85 Cel |
8KX16 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
18 |
FLATPACK |
.5 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
20 |
240 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
150 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
2.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
9 |
FLATPACK |
70 Cel |
32KX9 |
32K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
Not Qualified |
294912 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
6.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.