Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Samsung |
ZBT SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
1 |
167 MHz |
Not Qualified |
18874368 bit |
e3 |
.13 Amp |
3.5 ns |
||||||||||||||||||||
|
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
410 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
150 MHz |
Not Qualified |
9437184 bit |
.05 Amp |
3.8 ns |
|||||||||||||||||||||||
Samsung |
CACHE SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK |
QFP100,.7X.9 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
3 mm |
66 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.13 V |
e0 |
YES |
.001 Amp |
20 mm |
15 ns |
|||||||||||||
|
Samsung |
ZBT SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
470 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
1 |
250 MHz |
Not Qualified |
9437184 bit |
e3 |
.06 Amp |
2.6 ns |
||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.05 Amp |
3.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
37748736 bit |
e0 |
.01 Amp |
2.6 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
37748736 bit |
e0 |
.01 Amp |
2.6 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
320 mA |
131072 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
2.37 V |
0 Cel |
QUAD |
R-PQFP-G100 |
138 MHz |
Not Qualified |
4718592 bit |
.04 Amp |
4 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.05 Amp |
8.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
117 MHz |
Not Qualified |
4718592 bit |
.05 Amp |
7.5 ns |
||||||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
420 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
183 MHz |
Not Qualified |
9437184 bit |
.05 Amp |
3.3 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
425 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
166 MHz |
Not Qualified |
4718592 bit |
e0 |
.03 Amp |
3.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
167 MHz |
Not Qualified |
4718592 bit |
e0 |
.05 Amp |
3.5 ns |
|||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
290 mA |
131072 words |
COMMON |
2.5/3.3,3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
1 |
167 MHz |
Not Qualified |
4194304 bit |
e3 |
.05 Amp |
3.5 ns |
||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
117 MHz |
Not Qualified |
18874368 bit |
e0 |
240 |
.13 Amp |
7.5 ns |
||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
2.38 V |
0 Cel |
TIN SILVER COPPER |
QUAD |
R-PQFP-G100 |
3 |
166 MHz |
Not Qualified |
75497472 bit |
e1 |
3.5 ns |
||||||||||||||||||||||
|
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
225 MHz |
Not Qualified |
9437184 bit |
.05 Amp |
2.8 ns |
|||||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
420 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
166 MHz |
Not Qualified |
18874368 bit |
.03 Amp |
3.5 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
131072 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
138 MHz |
Not Qualified |
2359296 bit |
e0 |
.02 Amp |
4 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
1 |
133 MHz |
Not Qualified |
9437184 bit |
.06 Amp |
6.5 ns |
|||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
166 MHz |
Not Qualified |
9437184 bit |
.06 Amp |
3.5 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
2359296 bit |
e0 |
.02 Amp |
3.1 ns |
|||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.37 V |
0 Cel |
QUAD |
R-PQFP-G100 |
275 MHz |
Not Qualified |
4718592 bit |
.04 Amp |
2.2 ns |
||||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
340 mA |
262144 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.37 V |
0 Cel |
QUAD |
R-PQFP-G100 |
149 MHz |
Not Qualified |
4718592 bit |
.04 Amp |
3.8 ns |
||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
37748736 bit |
e0 |
.01 Amp |
3.2 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
QUAD |
R-PQFP-G100 |
3 |
133 MHz |
Not Qualified |
4718592 bit |
e1 |
.05 Amp |
6.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
133 MHz |
Not Qualified |
9437184 bit |
e0 |
.02 Amp |
4.2 ns |
||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
18874368 bit |
e0 |
.01 Amp |
2.6 ns |
||||||||||||||||||||||
|
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
1048576 words |
COMMON |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
1 |
250 MHz |
Not Qualified |
18874368 bit |
e3 |
.13 Amp |
2.6 ns |
||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
66 MHz |
Not Qualified |
2097152 bit |
e0 |
.001 Amp |
8 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
1 |
117 MHz |
Not Qualified |
18874368 bit |
.13 Amp |
7.5 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
0 Cel |
QUAD |
R-PQFP-G100 |
1 |
167 MHz |
Not Qualified |
18874368 bit |
.13 Amp |
3.5 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
185 MHz |
Not Qualified |
18874368 bit |
e0 |
.03 Amp |
3.3 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
Not Qualified |
18874368 bit |
e0 |
.01 Amp |
3.2 ns |
||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
320 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
18874368 bit |
e0 |
.03 Amp |
8.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.03 Amp |
5 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
1 |
117 MHz |
Not Qualified |
9437184 bit |
.06 Amp |
7.5 ns |
|||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
2.38 V |
0 Cel |
TIN SILVER COPPER |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
75497472 bit |
e1 |
2.6 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
150 MHz |
Not Qualified |
18874368 bit |
e0 |
.03 Amp |
3 ns |
||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
330 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.05 Amp |
9 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.05 Amp |
4.5 ns |
|||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
83 MHz |
Not Qualified |
4718592 bit |
.05 Amp |
9 ns |
||||||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
420 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
166 MHz |
Not Qualified |
9437184 bit |
.05 Amp |
3.5 ns |
|||||||||||||||||||||||
|
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
260 mA |
131072 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
83 MHz |
Not Qualified |
4718592 bit |
.03 Amp |
9 ns |
|||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
410 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
150 MHz |
Not Qualified |
9437184 bit |
e0 |
.01 Amp |
3.8 ns |
|||||||||||||||||||||
|
Samsung |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
340 mA |
1048576 words |
COMMON |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN SILVER COPPER |
QUAD |
R-PQFP-G100 |
3 |
200 MHz |
Not Qualified |
18874368 bit |
e1 |
.13 Amp |
3.1 ns |
||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
1048576 words |
COMMON |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
1 |
250 MHz |
Not Qualified |
18874368 bit |
.13 Amp |
2.6 ns |
|||||||||||||||||||||||
Samsung |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
380 mA |
524288 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
183 MHz |
Not Qualified |
9437184 bit |
e0 |
.01 Amp |
3.3 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.