SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
UPD46259LA-8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	294912 bit			e0						8 ns
UPD421002LA-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			80 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0				.001 Amp		70 ns
IDT71V424L15YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	15 ns
UPD46258LLA-8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	262144 bit			e0						8 ns
7164S35YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	325 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	35 ns
HM624256LJP-45	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							18.17 mm	45 ns
IDT7164L35Y8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e0			YES		17.9324 mm	35 ns
UPD434008ALE-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		17 ns
HM628127HJP-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.71 mm	17 ns
HM6216255HCLJP-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm		4194304 bit	4.5 V							28.615 mm	12 ns
IDT71V256SA12YG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28		3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3			YES		17.9324 mm	12 ns
71V256SA15YG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28	3	3.6 V			Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260		.002 Amp		15 ns
71V416S10YG	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.02 Amp	28.575 mm	10 ns
HM627HLJP-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V							15.63 mm	35 ns
HM62W4100HLJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						20.71 mm	12 ns
HM6207HLJP-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP	e0				.0001 Amp	15.63 mm	25 ns
UPD434016ALE-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	4194304 bit			e0				.01 Amp		20 ns
71V124SA12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71V124SA10TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3.15 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.955 mm	10 ns
HM62W1864HLJP-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		18	SMALL OUTLINE			1.27 mm	70 Cel		64KX18	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1179648 bit	3 V							28.33 mm	25 ns
UPD434001ALLE-A17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	4194304 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0				.005 Amp		17 ns
IDT71V424S12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	12 ns
UPD43251LA-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	262144 bit			e0				.002 Amp		45 ns
UPD431016LE-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.01 Amp	28.73 mm	15 ns
HM62W1864HLJP-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		18	SMALL OUTLINE			1.27 mm	70 Cel		64KX18	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1179648 bit	3 V							28.33 mm	30 ns
HM624100JP-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.71 mm	35 ns
HM62W4100HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						20.71 mm	10 ns
UPD43251BLA-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	262144 bit			e0				.002 Amp		15 ns
71V016SA15YIG	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V			Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp		15 ns
UPD444008LLE-A10-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	23.6 mm	10 ns
IDT71024S12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	20.96 mm	12 ns
IDT71V424S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	12 ns
7164L20YGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	19 ns
7164L85YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	85 ns
7164L25YGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	25 ns
IDT71124S20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.955 mm	20 ns
HM624100JLP-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.71 mm	30 ns
71V424S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	12 ns
IDT7164S20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	19 ns
71V424L12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.5 mm	12 ns
HM628511HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.0003 Amp	23.25 mm	15 ns
HM6207HLJP-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		256KX1	256K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP						15.63 mm	45 ns
71V124SA15TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	15 ns
UPD444001LE-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	4.5 V	0 Cel		DUAL		R-PDSO-J32	1	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						.01 Amp	21.26 mm	10 ns
UPD444008LLE-A10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.005 Amp	23.6 mm	10 ns
HM62D932JP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel		32KX9	32K		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	7.62 mm	Not Qualified	294912 bit	4.5 V	ADDRESS LATCH						20.71 mm	15 ns
UPD434016ALLE-A15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	4194304 bit			e0				.005 Amp		15 ns
IDT71V416L12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V			Not Qualified	4194304 bit	3 V		e3	40	260		.01 Amp		12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.